Green
DMTH4007SK3
40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Rated to +175C Ideal for High Ambient Temperature
I Max
D
BV R Max
DSS DS(ON)
Environments
T = +25C
C
100% Unclamped Inductive Switching Ensures More Reliable
40V 6m @ V = 10V 80A
GS
and Robust End Application
Low R Ensures On State Losses are Minimized
DS(ON)
Excellent Q x R Product (FOM)
gd DS(ON)
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description and Applications
Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET is designed to minimize the on-state
resistance (R ) and yet maintain superior switching performance,
DS(ON)
Mechanical Data
making it ideal for high efficiency power management applications.
Case: TO252 (DPAK)
Power Management Functions
Case Material: Molded Plastic, Green Molding Compound.
DC-DC Converters
UL Flammability Classification Rating 94V-0
Backlighting
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
TO252 (DPAK)
Top View Pin Out Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMTH4007SK3-13 TO252 (DPAK) 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMTH4007SK3
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 40 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C 17.6
A
Continuous Drain Current, V = 10V (Note 5) I A
GS D
12.5
T = +100C
A
T = +25C 76
C
A
Continuous Drain Current, V = 10V (Note 6) I
GS D
54
T = +100C
C
Maximum Continuous Body Diode Forward Current (Note 6) I 60 A
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 100 A
DM
Avalanche Current, L=0.3mH I 20 A
AS
Avalanche Energy, L=0.3mH 60 mJ
E
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 3.1 W
P
D
Thermal Resistance, Junction to Ambient (Note 5) 47 C/W
R
JA
Total Power Dissipation (Note 6) 59 W
P
D
Thermal Resistance, Junction to Case (Note 6) 2.5 C/W
R
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 40 - - V V = 0V, I = 1mA
DSS GS D
Zero Gate Voltage Drain Current I - - 1 A V = 32V, V = 0V
DSS DS GS
Gate-Source Leakage I - - 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 2 - 4 V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance R - - 6 m V = 10V, I = 20A
DS(ON) GS D
Diode Forward Voltage V - - 1.2 V V = 0V, I = 20A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
2082
Input Capacitance - -
Ciss
V = 25V, V = 0V,
DS GS
790
Output Capacitance - - pF
C
oss
f = 1MHz
Reverse Transfer Capacitance - 113 -
C
rss
Gate Resistance - 0.46 -
R V = 0V, V = 0V, f = 1MHz
g DS GS
Total Gate Charge - 41.9 -
Q
g
10
Gate-Source Charge Q - - nC V = 30V, I = 20A, V = 10V
gs DS D GS
11.5
Gate-Drain Charge Q - -
gd
7
Turn-On Delay Time t - -
D(ON)
11.5
Turn-On Rise Time t - -
R V = 30V, V = 10V,
DD GS
ns
15.6
Turn-Off Delay Time t - - I = 20A, R = 3
D(OFF) D G
8.8
Turn-Off Fall Time - -
t
F
Body Diode Reverse Recovery Time - 29.9 - ns
t
RR
I = 20A, di/dt = 100A/s
F
Body Diode Reverse Recovery Charge - 23 - nC
Q
RR
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 7
DMTH4007SK3 April 2016
Diodes Incorporated
www.diodes.com
Document number: DS38564 Rev. 1 - 2