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X-On Electronics has gained recognition as a prominent supplier of TSM120N10PQ56 RLG MOSFETs across the USA, India, Europe, Australia, and various other global locations. TSM120N10PQ56 RLG MOSFETs are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TSM120N10PQ56 RLG Taiwan Semiconductor

TSM120N10PQ56 RLG electronic component of Taiwan Semiconductor
TSM120N10PQ56 RLG Taiwan Semiconductor
TSM120N10PQ56 RLG MOSFETs
TSM120N10PQ56 RLG  Semiconductors

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See Product Specifications
Part No. TSM120N10PQ56 RLG
Manufacturer: Taiwan Semiconductor
Category: MOSFETs
Description: Trans MOSFET N-CH 100V 16.1A 8-Pin DFN EP T/R
Datasheet: TSM120N10PQ56 RLG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.8895 ea
Line Total: USD 2223.75 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Fri. 10 Jan to Thu. 16 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.8895

   
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Operating Temperature Classification
Operating Temp Range
Gate-Source Voltage Max
Number Of Elements
Drain-Source On-Volt
Rad Hardened
Package Type
Type
Pin Count
 
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We are delighted to provide the TSM120N10PQ56 RLG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSM120N10PQ56 RLG and other electronic components in the MOSFETs category and beyond.

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TSM120N10PQ56 100V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain Parameter Value Unit 2. Source 7. Drain V 100 V 3. Source 6. Drain DS 4. Gate 5. Drain R (max) 12 m DS(on) Q 145 nC g Features Block Diagram Low On-Resistance Low Input Capacitance Low Gate Charge Ordering Information Part No. Package Packing TSM120N10PQ56 RLG PDFN56 2.5kpcs / 13 Reel Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. N-Channel MOSFET o Absolute Maximum Ratings (Tc=25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 100 V DS Gate-Source Voltage V 20 V GS T =25C 58 C (Note 3) Continuous Drain Current I A D T =25C 16.1 A (Note 1) Drain Current-Pulsed I 150 A DM , Single Pulse Avalanche Energy L=0.5mH E 156 mJ AS T =25C 36 C (Note 2) Maximum Power Dissipation P W D T =25C 2 A Storage Temperature Range T -55 to +150 C STG Operating Junction Temperature Range T -55 to +150 C J Thermal Performance Parameter Symbol Limit Unit o Thermal Resistance - Junction to Case R 1.2 C/W JC o Thermal Resistance - Junction to Ambient R 62 C/W JA 1/6 Version: A14 TSM120N10PQ56 100V N-Channel MOSFET o Electrical Specifications (T =25 C unless otherwise noted) J Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 100 -- -- V GS D DSS Drain-Source On-State Resistance V = 10V, I = 30A R -- 10 12 m GS D DS(ON) Gate Threshold Voltage V = V , I = 250A V 2 3 V 4 DS GS D GS(TH) Zero Gate Voltage Drain Current V = 80V, V = 0V I -- -- 1 A DS GS DSS Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS Dynamic Total Gate Charge Q -- 145 -- g V = 50V, I = 30A, DS D Gate-Source Charge Q -- 25 -- nC gs V = 10V GS Gate-Drain Charge Q -- 43 -- gd Input Capacitance C -- 3902 -- iss V = 30V, V = 0V, DS GS Output Capacitance C -- 251 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 93 -- rss Switching Turn-On Delay Time t -- 27 -- d(on) Turn-On Rise Time t -- -- 13 r V = 10V, V = 50V, GS DS ns Turn-Off Delay Time R = 3, I = 30A t -- 15 -- G D d(off) Turn-Off Fall Time t -- 42 -- f Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward V =0V, I =30A V -- -- 1.3 V GS S SD Voltage Reverse Recovery Time t -- 65 -- ns rr I = 30A, dI/dt = 100A/s S Reverse Recovery Charge Q -- 175 -- nC rr Notes: 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. 2. R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference JA is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA determined by the users board design. R shown below for single device operation on FR-4 PCB in still air JA 3. The maximum current is limited by package. 2/6 Version: A14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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