TSM120N10PQ56 100V N-Channel MOSFET PDFN56 Key Parameter Performance Pin Definition: 1. Source 8. Drain Parameter Value Unit 2. Source 7. Drain V 100 V 3. Source 6. Drain DS 4. Gate 5. Drain R (max) 12 m DS(on) Q 145 nC g Features Block Diagram Low On-Resistance Low Input Capacitance Low Gate Charge Ordering Information Part No. Package Packing TSM120N10PQ56 RLG PDFN56 2.5kpcs / 13 Reel Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. N-Channel MOSFET o Absolute Maximum Ratings (Tc=25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 100 V DS Gate-Source Voltage V 20 V GS T =25C 58 C (Note 3) Continuous Drain Current I A D T =25C 16.1 A (Note 1) Drain Current-Pulsed I 150 A DM , Single Pulse Avalanche Energy L=0.5mH E 156 mJ AS T =25C 36 C (Note 2) Maximum Power Dissipation P W D T =25C 2 A Storage Temperature Range T -55 to +150 C STG Operating Junction Temperature Range T -55 to +150 C J Thermal Performance Parameter Symbol Limit Unit o Thermal Resistance - Junction to Case R 1.2 C/W JC o Thermal Resistance - Junction to Ambient R 62 C/W JA 1/6 Version: A14 TSM120N10PQ56 100V N-Channel MOSFET o Electrical Specifications (T =25 C unless otherwise noted) J Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 100 -- -- V GS D DSS Drain-Source On-State Resistance V = 10V, I = 30A R -- 10 12 m GS D DS(ON) Gate Threshold Voltage V = V , I = 250A V 2 3 V 4 DS GS D GS(TH) Zero Gate Voltage Drain Current V = 80V, V = 0V I -- -- 1 A DS GS DSS Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS Dynamic Total Gate Charge Q -- 145 -- g V = 50V, I = 30A, DS D Gate-Source Charge Q -- 25 -- nC gs V = 10V GS Gate-Drain Charge Q -- 43 -- gd Input Capacitance C -- 3902 -- iss V = 30V, V = 0V, DS GS Output Capacitance C -- 251 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 93 -- rss Switching Turn-On Delay Time t -- 27 -- d(on) Turn-On Rise Time t -- -- 13 r V = 10V, V = 50V, GS DS ns Turn-Off Delay Time R = 3, I = 30A t -- 15 -- G D d(off) Turn-Off Fall Time t -- 42 -- f Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward V =0V, I =30A V -- -- 1.3 V GS S SD Voltage Reverse Recovery Time t -- 65 -- ns rr I = 30A, dI/dt = 100A/s S Reverse Recovery Charge Q -- 175 -- nC rr Notes: 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. 2. R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference JA is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA determined by the users board design. R shown below for single device operation on FR-4 PCB in still air JA 3. The maximum current is limited by package. 2/6 Version: A14