X-On Electronics has gained recognition as a prominent supplier of SIUD402ED-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIUD402ED-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIUD402ED-T1-GE3 Vishay

SIUD402ED-T1-GE3 electronic component of Vishay
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Part No.SIUD402ED-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V Vds 8V Vgs PowerPAK 0806
Datasheet: SIUD402ED-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2622 ea
Line Total: USD 0.26 
Availability - 24050
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 5
Multiples : 5
5 : USD 0.2463
50 : USD 0.2003
150 : USD 0.1806
500 : USD 0.1559
3000 : USD 0.145
6000 : USD 0.1385

24050
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2622
10 : USD 0.1794
100 : USD 0.0954
1000 : USD 0.0874
3000 : USD 0.0701
9000 : USD 0.0632
24000 : USD 0.0632
45000 : USD 0.0598

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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We are delighted to provide the SIUD402ED-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIUD402ED-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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0.8 mm0.8 mm SiUD402ED www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES TrenchFET power MOSFET PowerPAK 0806 Single D Ultra small 0.8 mm x 0.6 mm outline 3 Ultra thin 0.4 mm max. height 100 % R tested g Typical ESD protection 2000 V (HBM) Material categorization: for definitions of compliance 1 G please see www.vishay.com/doc 99912 2 11 S APPLICATIONS Top View Bottom View D Marking Code: C Load switch High speed switching PRODUCT SUMMARY DC/DC converters V (V) 20 DS G R max. ( ) at V = 4.5 V 0.73 DS(on) GS For smart phones, tablet PCs and R max. () at V = 2.5 V 0.87 DS(on) GS mobile computing R max. ( ) at V = 1.8 V 1.10 DS(on) GS Small signal switching R max. () at V = 1.5 V 1.80 DS(on) GS Q typ. (nC) 0.5 g a I (A) 1 S D N-Channel MOSFET Configuration Single ORDERING INFORMATION Package PowerPAK 0806 Lead (Pb)-free and halogen-free SiUD402ED-T1-GE3 Note The lead finish is NiPdAu and classed as E4 finish ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-source voltage V 20 DS V Gate-source voltage V 8 GS a T = 25 C 1 A a T = 70 C 0.8 A Continuous drain current (T = 150 C) I J D b T = 25 C 0.35 A b T = 70 C 0.28 A A Pulsed drain current (t = 100 s) I 1.4 DM a T = 25 C 1 A Continuous source-drain diode current I S b T = 25 C 0.37 A a T = 25 C 1.25 A a T = 70 C 0.8 A Maximum power dissipation P W D b T = 25 C 0.37 A b T = 70 C 0.24 A Operating junction and storage temperature range T , T -55 to +150 J stg C c Soldering recommendations (peak temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, d Maximum junction-to-ambient 80 100 t 5 s R C/W thJA b, e Maximum junction-to-ambient 265 335 Notes a. Surface mounted on 1 x 1 FR4 board with full copper, t = 5 s b. Surface mounted on 1 x 1 FR4 board with minimum copper, t = 5 s c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering d. Maximum under steady state conditions is 135 C/W e. Maximum under steady state conditions is 400 C/W S20-0847-Rev. B, 26-Oct-2020 Document Number: 62968 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 0.6 mm6mm 0.4 mm SiUD402ED www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-source breakdown voltage V V = 0 V, I = 250 A 20 - - V DS GS D V temperature coefficient V /T -18 - DS DS J I = 250 A mV/C D V temperature coefficient V /T --1.9- GS(th) GS(th) J Gate-source threshold voltage V V = V , I = 250 A 0.4 - 0.9 V GS(th) DS GS D V = 0 V, V = 4.5 V - - 0.5 DS GS Gate-source leakage I GSS V = 0 V, V = 8 V - - 10 DS GS A V = 20 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I DSS V = 20 V, V = 0 V, T = 55 C - - 10 DS GS J a On-state drain current I V 5 V, V = 4.5 V 1 - - A D(on) DS GS V = 4.5 V, I = 0.2 A - 0.57 0.73 GS D V = 2.5 V, I = 0.1 A - 0.67 0.87 GS D a Drain-source on-state resistance R DS(on) V = 1.8 V, I = 0.02 A - 0.80 1.10 GS D V = 1.5 V, I = 0.01 A - 0.90 1.80 GS D a Forward transconductance g V = 10 V, I = 0.2 A - 1.2 - S fs DS D b Dynamic Input capacitance C -16 - iss Output capacitance C -7V = 10 V, V = 0 V, f = 1 MHz.5- pF oss DS GS Reverse transfer capacitance C -3.5- rss V = 10 V, V = 8 V, I = 0.2 A - 0.75 1.20 DS GS D Total gate charge Q g - 0.50 0.75 nC Gate-source charge Q -0V = 10 V, V = 4.5 V, I = 0.2 A.09- gs DS GS D Gate-drain charge Q -0.09- gd Gate resistance R f = 1 MHz 3 24 50 g Turn-on delay time t -7 15 d(on) Rise time t -1020 r V = 10 V, R = 50 DD L I 0.2 A, V = 4.5 V, Rg = 1 Turn-off delay time t -2D GEN 350 d(off) Fall time t -7 15 f ns Turn-on delay time t -5 10 d(on) Rise time t -510 r V = 10 V, R = 15 DD L I 0.2 A, V = 8 V, R = 1 Turn-off delay time t -1D GEN g 125 d(off) Fall time t -5 10 f Drain-Source Body Diode Characteristics c Continuous source-drain diode current I T = 25 C - - 1 S C A Pulse diode forward current I -- 1.4 SM Body diode voltage V I = 0.2 A, V = 0 V - 0.8 1.2 V SD S GS Body diode reverse recovery time t -11 25 ns rr Body diode reverse recovery charge Q -3.5 7 nC rr I = 0.2 A, dI/dt = 100 A/s, T = 25 C F J Reverse recovery fall time t -5.3 - a ns Reverse recovery rise time t -5.7 - b Note a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing c. Surface mounted on 1 x 1 FR4 board with full copper, t = 5 s Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0847-Rev. B, 26-Oct-2020 Document Number: 62968 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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