SSM6K403TU,LF Toshiba

SSM6K403TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS MOS SSM6K403TU Power Management Switch Applications Unit: mm High-Speed Switching Applications 2.10.1 1.70.1 1 6 1.5V drive Low ON-resistance: R = 66m (max) ( V = 1.5V) 2 5 on GS R = 43m (max) ( V = 1.8V) on GS 3 4 R = 32m (max) ( V = 2.5V) on GS R = 28m (max) ( V = 4.0V) on GS Absolute Maximum Ratings (Ta = 25C) (Note) 1,2,5,6 : Drain Characteristic Symbol Rating Unit 3 : Gate UF6 4 : source Drain-source voltage V 20 V DSS Gate-source voltage V 10 V GSS JEDEC DC I 4.2 D Drain current A JEITA Pulse I 8.4 DP Drain power dissipation P (Note1) 500 mW TOSHIBA 2-2T1D D Channel temperature T 150 C ch Weight: 7.0mg (typ.) Storage temperature T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 645 mm ) Start of commercial production 2008-01 1 2014-03-01 2.00.1 1.30.1 0.70.05 0.65 0.65 0.1660.05 +0.1 0.3-0.05SSM6K403TU Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA, V = 0 V 20 (BR) DSS D GS Drain-source breakdown voltage V I = 1 mA, V = -10V 12 V (BR) DSX D GS Drain cutoff current I V =20 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 10 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.35 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 3.0 A (Note2) 10 20 S fs DS D I = 3.0 A, V = 4.0 V (Note2) 19 28 D GS I = 3.0 A, V = 2.5 V (Note2) 23 32 D GS Drain-source ON-resistance R m DS (ON) I = 1.0 A, V = 1.8 V (Note2) 28 43 D GS I = 0.5 A, V = 1.5 V (Note2) 35 66 D GS Input capacitance C 1050 iss Output capacitance C V = 10 V, V = 0 V, f = 1 MHz 175 pF oss DS GS Reverse transfer capacitance C 160 rss Total Gate Charge Q 16.8 g V = 10 V, I = 4.2 A DD D Gate-Source Charge Q 12.1 nC gs V = 4 V GS Gate-Drain Charge Q 4.7 gd Turn-on time t 18 on V = 10 V, I = 1 A DD D Switching time ns V = 0 to 2.5 V, R = 4.7 GS G Turn-off time t 32 off Drain-source forward voltage V I = -4.2 A, V = 0 V (Note2) -0.8 -1.2 V DSF D GS Note 2: Pulse test 2 2014-03-01