X-On Electronics has gained recognition as a prominent supplier of SSM3K56FS,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3K56FS,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3K56FS,LF Toshiba

SSM3K56FS,LF electronic component of Toshiba
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Part No.SSM3K56FS,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF
Datasheet: SSM3K56FS,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0515 ea
Line Total: USD 154.5 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0515

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4772
10 : USD 0.3442
100 : USD 0.1943
500 : USD 0.1288
1000 : USD 0.0987

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4772
10 : USD 0.3442
100 : USD 0.1943
500 : USD 0.1288
1000 : USD 0.0987

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0894
6000 : USD 0.0772
15000 : USD 0.0686
30000 : USD 0.0643
75000 : USD 0.0571
150000 : USD 0.0549

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0573

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8575
10 : USD 0.6544
100 : USD 0.1547
500 : USD 0.0983
1000 : USD 0.077
3000 : USD 0.0619

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 139
Multiples : 1
139 : USD 0.0814
250 : USD 0.0806
500 : USD 0.0797
1000 : USD 0.0551

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 139
Multiples : 1
139 : USD 0.0942
250 : USD 0.0931
500 : USD 0.087
1000 : USD 0.0569

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SSM3K56FS,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3K56FS,LF and other electronic components in the MOSFETs category and beyond.

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SSM3K56FS MOSFETs Silicon N-Channel MOS SSM3K56FSSSM3K56FSSSM3K56FSSSM3K56FS 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Speed Switching 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : R = 235 m (max) ( V = 4.5 V) DS(ON) GS R = 300 m (max) ( V = 2.5 V) DS(ON) GS R = 480 m (max) ( V = 1.8 V) DS(ON) GS R = 840 m (max) ( V = 1.5 V) DS(ON) GS 3. 3. 3. 3. Packaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin Configuration 1: Gate 2: Source 3: Drain SSM Start of commercial production 2012-06 2014-04-04 1 Rev.2.0SSM3K56FS 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSS Gate-source voltage V 8 GSS Drain current (DC) (Note 1) I 800 mA D Drain current (pulsed) (Note 1),(Note 2) I 1600 DP Power dissipation (Note 3) P 150 mW D Power dissipation (Note 4) P 500 mW D Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) 10 ms, duty = 1% Note 3: Mounted on a FR4 board.(25.4 mm 25.4 mm 1.6 mm, Cu Pad: 0.36 mm2 3) Note 4: Mounted on a FR4 board.(25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm2) Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the power dissipation, P , vary according to the th(ch-a) D board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2014-04-04 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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