SSM3K37MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K37MFV High Speed Switching Applications nit: mm Analog Switch Applications 1.20.05 0.80.05 1.5-V drive Low ON-resistance R = 5.60 (max) ( V = 1.5 V) DS(ON) GS R = 4.05 (max) ( V = 1.8 V) DS(ON) GS 1 R = 3.02 (max) ( V = 2.5 V) DS(ON) GS R = 2.20 (max) ( V = 4.5 V) 2 DS(ON) GS 3 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSS 1.Gate Gate-source voltage V 10 V GSS 2.Source DC I 250 D VESM 3.Drain Drain current mA Pulse I 500 DP JEDEC - Drain power dissipation (Ta = 25C) P (Note 1) 150 mW D Channel temperature T 150 C JEITA - ch Storage temperature T 55 to 150 C TOSHIBA 2-1L1B stg Weight: 1.5mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1:Mounted on a FR4 board (25.4 mm 25.4 mm 1.6 mm) 0.5mm 0.45mm 0.45mm 0.4mm Marking Equivalent Circuit 3 3 SU 1 2 12 Start of commercial production 2010-02 1 2014-03-01 1.20.05 0.80.05 0.50.05 0.4 0.4 0.220.05 0.130.05 0.320.05 SSM3K37MFV Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1 mA, V = 0 V 20 (BR) DSS D GS Drain-source breakdown voltage V V I = 1 mA, V = -10 V 12 (BR) DSX D GS Drain cutoff current I V = 20 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 10 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.35 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 100mA (Note 2) 0.14 0.28 S fs DS D I = 100 mA, V = 4.5 V (Note 2) 1.65 2.20 D GS I = 50 mA, V = 2.5 V (Note 2) 2.16 3.02 D GS Drain-source ON-resistance R DS (ON) I = 20 mA, V = 1.8 V (Note 2) 2.66 4.05 D GS I = 10 mA, V = 1.5 V (Note 2) 3.07 5.60 D GS Input capacitance C 12 iss Output capacitance C V = 10 V, V = 0 V, f = 1 MHz 5.5 pF DS GS oss Reverse transfer capacitance C 4.1 rss Turn-on time t V = 10 V, I = 100 mA 18 on DD D Switching time ns Turn-off time t V = 0 to 2.5 V, R = 50 36 GS G off Drain-source forward voltage V I = -250 mA, V = 0 V (Note 2) -0.9 -1.2 V DSF D GS Note2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) V IN 2.5 V 90% V = 10 V DD 2.5 V OUT R = 50 G 10% IN 0 V Duty 1% 0 V : t , t < 5 ns IN r f V DD Common Source (c) V 90% OUT 10 s Ta = 25C 10% V DD V DS (ON) t t r f t t on off Precaution V can be expressed as the voltage between gate and source when the low operating current value is I = 1 mA for th D this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th GS (off) voltage than V (The relationship can be established as follows: V < V < V ) th. GS (off) th GS (on). Take this into consideration when using the device. Do not use this device under avalanche mode. It may cause the device to break down. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01 R G