X-On Electronics has gained recognition as a prominent supplier of SSM3K44FS,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3K44FS,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3K44FS,LF Toshiba

SSM3K44FS,LF electronic component of Toshiba
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Part No.SSM3K44FS,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET LowON Res MOSFET ID=.1A VDSS=30V
Datasheet: SSM3K44FS,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 0.0299 ea
Line Total: USD 0.09 
Availability - 2
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
2
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3
Multiples : 1
3 : USD 0.0299

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Product Type
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSM3K44FS,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3K44FS,LF and other electronic components in the MOSFETs category and beyond.

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SSM3K44FS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K44FS High Speed Switching Applications Unit: mm Analog Switching Applications Compact package suitable for high-density mounting Low ON-resistance : R = 4.0 (max) ( V = 4 V) DS(ON) GS : R = 7.0 (max) ( V = 2.5 V) DS(ON) GS Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage V 30 V DSS Gate-Source voltage V 20 V GSS DC I 100 D Drain current mA Pulse I 200 DP Drain power dissipation (Ta = 25C) P (Note 1) 150 mW D Channel temperature T 150 C ch Storage temperature range T 55 to 150 C JEDEC stg JEITA Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-2H1B temperature, etc.) may cause this product to decrease in the Weight: 2.4 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 Note 1: mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mm, Cu Pad : 0.36mm 3) Marking Equivalent Circuit 3 3 N T 1 2 12 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2009-12 1 2014-03-01 SSM3K44FS Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I V = 14 V, V = 0 V 1 A GSS GS DS Drain-Source breakdown voltage V I = 0.1 mA, V = 0 V 30 V (BR) DSS D GS Drain Cut-off current I V = 30 V, V = 0 V 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 0.1 mA 0.8 1.5 V th DS D Forward transfer admittance Y V = 3 V, I = 10 mA 25 mS fs DS D I = 10 mA, V = 4 V 2.2 4.0 D GS Drain-Source ON resistance R DS (ON) I = 10 mA, V = 2.5 V 4.0 7.0 D GS Input capacitance C 8.5 iss Reverse transfer capacitance C V = 3 V, V = 0 V, f = 1 MHz 5.3 pF rss DS GS Output capacitance C 9.4 oss Turn-on time t 50 on V = 5 V, I = 10 mA, DD D Switching time ns V = 0 to 5 V GS Turn-off time t 200 off Switching Time Test Circuit (a) Test circuit (b) V IN 5 V OUT 90% 5 V IN 10% 0 R L 0 V 10 s V DD (c) V V OUT DD 10% V = 5 V DD Duty 1% 90% V : t , t < 5 ns IN r f V DS (ON) t t r f (Z = 50 ) out Common source t t on off Ta = 25C Precaution Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (0.1mA for the th D SSM3K44FS). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V th. GS(off) th GS(on). Take this into consideration when using the device 2 2014-03-01 50

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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