X-On Electronics has gained recognition as a prominent supplier of SSM3K376R,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3K376R,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3K376R,LF Toshiba

SSM3K376R,LF electronic component of Toshiba
SSM3K376R,LF Toshiba
SSM3K376R,LF MOSFETs
SSM3K376R,LF  Semiconductors

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See Product Specifications
Part No. SSM3K376R,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET LowON Res MOSFET ID=4A VDSS=30V
Datasheet: SSM3K376R,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
154: USD 0.4234 ea
Line Total: USD 65.2 
Availability - 0
MOQ: 154  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 07 Apr to Fri. 11 Apr
MOQ : 154
Multiples : 1
154 : USD 0.4234
247 : USD 0.2634
474 : USD 0.137

0
Ship by Mon. 07 Apr to Fri. 11 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.0692
6000 : USD 0.065
9000 : USD 0.0585
15000 : USD 0.0576
21000 : USD 0.057

0
Ship by Mon. 07 Apr to Fri. 11 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.0563
6000 : USD 0.0533
12000 : USD 0.0524
18000 : USD 0.0515
24000 : USD 0.0505

0
Ship by Mon. 14 Apr to Thu. 17 Apr
MOQ : 5
Multiples : 5
5 : USD 0.154
50 : USD 0.1501
150 : USD 0.1474
500 : USD 0.1449

0
Ship by Thu. 03 Apr to Mon. 07 Apr
MOQ : 1
Multiples : 1
1 : USD 1.103
10 : USD 0.8373
100 : USD 0.1905
500 : USD 0.1263
1000 : USD 0.0973
3000 : USD 0.0752
9000 : USD 0.0662
24000 : USD 0.0622
45000 : USD 0.0572

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Product Type
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SSM3K376R,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3K376R,LF and other electronic components in the MOSFETs category and beyond.

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SSM3K376R MOSFETs Silicon N-Channel MOS SSM3K376R 1. Applications Power Management Switches DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.8-V gate drive voltage. (3) Low drain-source on-resistance : R = 56 m (max) ( V = 4.5 V) DS(ON) GS R = 72 m (max) ( V = 2.5 V) DS(ON) GS R = 109 m (max) ( V = 1.8 V) DS(ON) GS 3. Packaging and Pin Assignment 1: Gate 2: Source 3: Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3K376R,LF General Use SSM3K376R,LXGF YES (Note 1) Unintended Use (Note 1) SSM3K376R,LXHF YES Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. 2017-2021 2021-05-28 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0SSM3K376R 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 ) a Characteristics Symbol Rating Unit Drain-source voltage V 30 V DSS Gate-source voltage V 12/-8 GSS Drain current (DC) (Note 1) I 4 A D Drain current (pulsed) (Note 1), (Note 2) I 10 DP Power dissipation (Note 3) P 1 W D Power dissipation (t 10 s) (Note 3) P 2 D Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) 10 ms, duty 1% Note 3: Device mounted on an FR4 board. (25.4 mm 25.4 mm 1.6 mm ,Cu pad: 645 mm2) Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2017-2021 2021-05-28 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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