X-On Electronics has gained recognition as a prominent supplier of SSM3K16CT,L3F MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3K16CT,L3F MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3K16CT,L3F Toshiba

SSM3K16CT,L3F electronic component of Toshiba
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Part No.SSM3K16CT,L3F
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET LowON Res MOSFET ID=0.1A VDSS=20V
Datasheet: SSM3K16CT,L3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1127 ea
Line Total: USD 0.11 
Availability - 4646
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4646
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1127
10 : USD 0.0746
25 : USD 0.0736
100 : USD 0.0666
250 : USD 0.0595
500 : USD 0.0525
1000 : USD 0.0454
3000 : USD 0.0384

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Product Type
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSM3K16CT,L3F from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3K16CT,L3F and other electronic components in the MOSFETs category and beyond.

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SSM3K16CT TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K16CT High-Speed Switching Applications Unit: mm Analog Switch Applications Suitable for high-density mounting due to compact package Low ON-resistance : R = 3.0 (max) ( V = 4 V) on GS : R = 4.0 (max) ( V = 2.5 V) on GS : R = 15 (max) ( V = 1.5 V) on GS Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-Source voltage V 20 V DS Gate-Source voltage V 10 V GSS DC I 100 D Drain current mA Pulse I 200 DP Drain power dissipation (Ta = 25C) P (Note 1) 100 mW D Channel temperature T 150 C ch Storage temperature T 55 to 150 C stg CST3 Note: Using continuously under heavy loads (e.g. the application of JEDEC - high temperature/current/voltage and the significant change in JEITA - temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-1J1B operating temperature/current/voltage, etc.) are within the Weight: 0.75 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board 2 (10 mm 10 mm 1.0 t, Cu Pad: 100 mm ) Marking (Top View) Pin Condition (Top View) Equivalent Circuit Polarity mark Polarity mark (on the top) 3 1 3 SC 2 1. Gate 12 2. Source 3. Drain *Electrodes: on the bottom Handling Precaution When handling individual devices that are not yet mounted on a circuit board, ensure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2004-08 1 2014-03-01 SSM3K16CT Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 10 V, V = 0 1 A GSS GS DS Drain-Source breakdown voltage V I = 0.1 mA, V = 0 20 V (BR) DSS D GS Drain cut-off current I V = 20 V, V = 0 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 0.1 mA 0.6 1.1 V th DS D Forward transfer admittance Y V = 3 V, I = 10 mA 40 mS fs DS D I = 10 mA, V = 4 V 1.5 3.0 D GS Drain-Source ON-resistance R I = 10 mA, V = 2.5 V 2.2 4.0 DS (ON) D GS I = 1 mA, V = 1.5 V 5.2 15 D GS Input capacitance C V = 3 V, V = 0, f = 1 MHz 9.3 pF iss DS GS Reverse transfer capacitance C V = 3 V, V = 0, f = 1 MHz 4.5 pF rss DS GS Output capacitance C V = 3 V, V = 0, f = 1 MHz 9.8 pF oss DS GS Turn-on time t 70 on V = 3 V, I = 10 mA, DD D Switching time ns V = 0 to 2.5 V Turn-off time t GS 125 off Switching Time Test Circuit (a) Test circuit (b) V IN 2.5 V 90% OUT 2.5 V IN 10% 0 V 0 R L (c) V V 10 s OUT DD V DD 10% V = 3 V DD Duty 1% 90% V DS (ON) V : t , t < 5 ns IN r f t t r f (Z = 50 ) out Common Source t t on off Ta = 25C Precaution V can be expressed as the voltage between gate and source when the low operating current value is I 100 A for th D = this product. For normal switching operation, V requires a higher voltage than V and V requires a lower GS (on) th GS (off) voltage than V (The relationship can be established as follows: V < V < V .) th. GS (off) th GS (on) Take this into consideration when using the device. 2 2014-03-01 50

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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