SSM3K17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU High Speed Switching Applications Unit: mm Analog Switch Applications Suitable for high-density mounting due to compact package High drain-source voltage High speed switching Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-Source voltage V 50 V DS Gate-Source voltage V 7 V GSS DC I 100 D Drain current mA Pulse I 200 DP Drain power dissipation (Ta = 25C) P (Note 1) 150 mW D Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of JEDEC high temperature/current/voltage and the significant change in JEITA SC-70 temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-2E1E operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 6 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.6 mm 3) 0.6 mm 1.0 mm Marking Equivalent Circuit 3 3 D M 1 2 12 This transistor is a electrostatic sensitive device. Please handle with caution. Start of commercial production 2001-09 1 2014-03-01 SSM3K17FU Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 7 V, V = 0 5 A GSS GS DS Drain-Source breakdown voltage V I = 0.1 mA, V = 0 50 V (BR) DSS D GS Drain cut-off current I V = 50 V, V = 0 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 1 A 0.9 1.5 V th DS D Forward transfer admittance Y V = 3 V, I = 10 mA 20 40 mS fs DS D I = 10 mA, V = 4 V 12 20 D GS Drain-Source ON resistance R DS (ON) I = 10 mA, V = 2.5 V 22 40 D GS Input capacitance C V = 3 V, V = 0, f = 1 MHz 7 pF iss DS GS Reverse transfer capacitance C V = 3 V, V = 0, f = 1 MHz 3 pF rss DS GS Output capacitance C V = 3 V, V = 0, f = 1 MHz 7 pF oss DS GS Turn-on time t 100 on V = 3 V, I = 20 mA, V = 0 to 3 V, DD D GS Switching time ns R = 10 , R = 150 G L Turn-off time t 40 off Switching Time Test Circuit (a) Test circuit (b) V IN 3 V OUT 90% 3 V IN 10 10% 0 R L 0 V 1 s V DD (c) V V OUT DD 10% V = 3 V DD Duty1% 90% V : t , t < 5 ns V IN r f DS (ON) t t r f (Z = 50 ) out Common source t t on off Ta = 25C 2 2014-03-01 50