X-On Electronics has gained recognition as a prominent supplier of SSM3K17FU,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3K17FU,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3K17FU,LF Toshiba

SSM3K17FU,LF electronic component of Toshiba
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Part No.SSM3K17FU,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: N-Channel 50 V 100mA (Ta) 150mW (Ta) Surface Mount USM
Datasheet: SSM3K17FU,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0424 ea
Line Total: USD 127.2 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2819
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1081
50 : USD 0.0873
150 : USD 0.0769
500 : USD 0.0692
3000 : USD 0.0629
6000 : USD 0.0598

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Series
Transistor Type
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SSM3K17FU,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3K17FU,LF and other electronic components in the MOSFETs category and beyond.

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SSM3K17FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU High Speed Switching Applications Unit: mm Analog Switch Applications Suitable for high-density mounting due to compact package High drain-source voltage High speed switching Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-Source voltage V 50 V DS Gate-Source voltage V 7 V GSS DC I 100 D Drain current mA Pulse I 200 DP Drain power dissipation (Ta = 25C) P (Note 1) 150 mW D Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of JEDEC high temperature/current/voltage and the significant change in JEITA SC-70 temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-2E1E operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 6 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.6 mm 3) 0.6 mm 1.0 mm Marking Equivalent Circuit 3 3 D M 1 2 12 This transistor is a electrostatic sensitive device. Please handle with caution. Start of commercial production 2001-09 1 2014-03-01 SSM3K17FU Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 7 V, V = 0 5 A GSS GS DS Drain-Source breakdown voltage V I = 0.1 mA, V = 0 50 V (BR) DSS D GS Drain cut-off current I V = 50 V, V = 0 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 1 A 0.9 1.5 V th DS D Forward transfer admittance Y V = 3 V, I = 10 mA 20 40 mS fs DS D I = 10 mA, V = 4 V 12 20 D GS Drain-Source ON resistance R DS (ON) I = 10 mA, V = 2.5 V 22 40 D GS Input capacitance C V = 3 V, V = 0, f = 1 MHz 7 pF iss DS GS Reverse transfer capacitance C V = 3 V, V = 0, f = 1 MHz 3 pF rss DS GS Output capacitance C V = 3 V, V = 0, f = 1 MHz 7 pF oss DS GS Turn-on time t 100 on V = 3 V, I = 20 mA, V = 0 to 3 V, DD D GS Switching time ns R = 10 , R = 150 G L Turn-off time t 40 off Switching Time Test Circuit (a) Test circuit (b) V IN 3 V OUT 90% 3 V IN 10 10% 0 R L 0 V 1 s V DD (c) V V OUT DD 10% V = 3 V DD Duty1% 90% V : t , t < 5 ns V IN r f DS (ON) t t r f (Z = 50 ) out Common source t t on off Ta = 25C 2 2014-03-01 50

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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