2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIV) 2SK3798 Switching Regulator Applications Unit: mm Low drain-source ON resistance: R = 2.5 (typ.) DS (ON) High forward transfer admittance: Y = 2.8 S (typ.) fs Low leakage current: I = 100 A (V = 720 V) DSS DS Enhancement-mode: V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 900 V DSS Drain-gate voltage (R = 20 k) V 900 V GS DGR Gate-source voltage V 30 V GSS 1: Gate DC (Note 1) I 4 D 2: Drain Drain current A 3: Source Pulse (t = 1 ms) I 12 DP (Note 1) Drain power dissipation (Tc = 25C) JEDEC P 40 W D Single pulse avalanche energy JEITA SC-67 E 345 mJ AS (Note 2) TOSHIBA 2-10U1B Avalanche current I 4 A AR Weight : 1.7 g (typ.) Repetitive avalanche energy (Note 3) E 4.0 mJ AR Channel temperature T 150 C ch Storage temperature range T -55~150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case R 3.125 C/W th (ch-c) Thermal resistance, channel to ambient R 62.5 C/W th (ch-a) 1 Note 1: Ensure that the channel temperature does not exceed 150. Note 2: V = 90 V, T = 25C, L = 39.6 mH, I = 4.0 A, R = 25 DD ch AR G Note 3: Repetitive rating: Pulse width limited by maximum channel temperature 3 This transistor is an electrostatic sensitive device. Please handle with caution. Start of commercial production 2004-11 1 2013-11-01 2SK3798 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 30 V, V = 0 V 10 A GSS GS DS Gate-source breakdown voltage V I =10 A, V = 0 V 30 V (BR) GSS G DS Drain cut-off current I V = 720 V, V = 0 V 100 A DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 900 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.0 4.0 V th DS D Drain-source ON resistance R V = 10 V, I = 2 A 2.5 3.5 DS (ON) GS D Forward transfer admittance Y V = 20 V, I = 2 A 1.4 2.8 S fs DS D Input capacitance C 800 iss Reverse transfer capacitance C V = 25 V, V = 0 V, f = 1 MHz 20 pF rss DS GS Output capacitance C 85 oss 10 V I = 2 A V D OUT Rise time t 20 r V GS 0 V Turn-on time t 65 R = on L 50 100 Switching time ns Fall time t 45 f V 200 V DD Turn-off time t Duty 1%, t = 10 s 165 w off 26 Total gate charge Q g Gate-source charge Q V 400 V, V = 10 V, I = 4 A 14 nC gs DD GS D Gate-drain charge Q 12 gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit I 4 A Continuous drain reverse current (Note 1) DR Pulse drain reverse current (Note 1) I 12 A DRP Forward voltage (diode) V I = 4 A, V = 0 V 1.7 V DSF DR GS Reverse recovery time t I = 4 A, V = 0 V, 1100 ns rr DR GS dI /dt = 100 A/s Reverse recovery charge Q DR 8.3 C rr Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to K3798 Part No. (or abbreviation code) environmental matters such as the RoHS compatibility of Product. Lot No. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of Note 4 certain hazardous substances in electrical and electronic equipment. 2 2013-11-01