2SK3799 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK3799 Switching Regulator Applications Unit: mm Low drain-source ON resistance : R = 1.0 (typ.) DS (ON) High forward transfer admittance : Y = 6.0 S (typ.) fs Low leakage current : I = 100A (max) (V = 720 V) DSS DS Enhancement model : V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage V 900 V DSS Drain-gate voltage (R = 20 k ) V 900 V GS DGR Gate-source voltage V 30 V GSS DC (Note 1) I 8 A D Drain current Pulse (Note 1) I 24 A DP 1. Gate Drain power dissipation P 50 W D 2. Drain 3. Source Single pulse avalanche energy E 1080 mJ AS (Note 2) JEDEC Avalanche current I 8 A AR Repetitive avalanche energy (Note 3) E 5 mJ JEITA SC-67 AR Channel temperature T 150 C ch TOSHIBA 2-10U1B Storage temperature range T 55~150 C stg Weight: 1.7 g (typ.) 2 Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R 2.5 C / W th (ch c) Thermal resistance, channel to 1 R 62.5 C / W th (ch a) ambient Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: V = 90 V, T = 25C (initial), L = 30.9 mH, R = 25 , I = 8 A DD ch G AR 3 Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Handle with care. 1 2005-01-24 2SK3799 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I V = 30 V, V = 0 V 10 A GSS GS DS Drain-source breakdown voltage V I = 10 A, V = 0 V 30 V (BR) GSS G GS Drain cut-off current I V = 720 V, V = 0 V 100 A DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 450 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.0 4.0 V th DS D Drain-source ON resistance R V = 10 V, I = 4 A 1.0 1.3 DS (ON) GS D Forward transfer admittance Y V = 15 V, I = 4 A 3.5 6.0 S fs DS D Input capacitance C 2200 iss Reverse transfer capacitance C V = 25 V, V = 0 V, f = 1 MHz 45 pF rss DS GS Output capacitance C 190 oss Rise time t 25 r I = 4 A D 10 V Output V GS 0 V Turn-on time t 65 on Switching time ns Fall time t 20 f V 400 V DD Turn-off time t 120 off Duty 1%, t = 10 s w Total gate charge (Gate-source Q 60 g plus gate-drain) V 400 V, V = 10 V, I = 8 A nC DD GS D Gate-source charge Q 34 gs Gate-drain (miller) charge Q 26 gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current I 8 A DR (Note 1) Pulse drain reverse current I 24 A DRP (Note 1) Forward voltage (diode) V I = 8 A, V = 0 V 1.7 V DSF DR GS Reverse recovery time t 1700 ns rr I = 8 A, V = 0 V DR GS dl / dt = 100 A / S DR Reverse recovery charge Qrr 23 C Marking K3799 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-01-24 4.7 R = 100 L