DMJ70H1D3SJ3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low On-Resistance D BV R Max DSS DS(ON) T = +25C C High BV Rating for Power Application DSS 700V 1.3 V = 10V 4.6A GS Low Input Capacitance Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications Case: TO251 This MOSFET is designed to minimize the on-state resistance (R ), yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound. DS(ON) ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Terminal Connections: See Diagram Motor Control Terminals: Finish Matte Tin Annealed over Copper Leadframe. Backlighting Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.33 grams (Approximate) Power Management Functions G D S TO251 TO251 Top View Internal Schematic Pin Configuration Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging DMJ70H1D3SJ3 TO251 75 Pieces/Tube Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMJ70H1D3SJ3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 700 V DSS Gate-Source Voltage V 30 V GSS T = +25C 4.6 C Continuous Drain Current (Note 5) V = 10V I A GS D 2.9 T = +100C C Maximum Body Diode Forward Current (Note 6) 3.0 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 5.4 A DM Avalanche Current (Note 7) L = 60mH I 1.1 A AS Avalanche Energy (Note 7) L = 60mH E 40 mJ AS Peak Diode Recovery dv/dt (Note 7) dv/dt 5 V/ns Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 41 T = +25C C Total Power Dissipation (Note 5) W P D 16 T = +100C C Thermal Resistance, Junction to Ambient (Note 6) 79 R JA C/W 3.0 Thermal Resistance, Junction to Case (Note 5) R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 700 V BVDSS VGS = 0V, ID = 250A Zero Gate Voltage Drain Current 1 A I V = 700V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 30V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 2 2.9 4 V V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance 1.0 1.3 R V = 10V, I = 2.5A DS(ON) GS D Diode Forward Voltage 0.9 1.3 V V V = 0V, I = 5A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance 351 C ISS V = 50V, f = 1MHz, DS 66 Output Capacitance C pF OSS V = 0V GS 1.1 Reverse Transfer Capacitance C RSS 3.5 Gate Resistance R V = 0V, V = 0V, f = 1MHz G DS GS 13.9 Total Gate Charge Q G V = 560V, I = 5A, DD D 1.9 Gate-Source Charge nC Q GS V = 10V GS Gate-Drain Charge 8.5 Q GD Turn-On Delay Time 8.5 t D(ON) Turn-On Rise Time 11.6 t V = 350V, V = 10V, R DD GS ns Turn-Off Delay Time 24.5 t R = 4.7, I = 2.5A D(OFF) G D 10 Turn-Off Fall Time t F 212 Body Diode Reverse Recovery Time t ns RR 251 Body Diode Reverse Recovery Time (T = +150C) t ns J RR I = 5A, dI/dt = 100A/s S 1.8 Body Diode Reverse Recovery Charge Q C RR 2.3 Body Diode Reverse Recovery Charge (T = +150C) Q C J RR Notes: 5. Device mounted on infinite heatsink. 6. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout. 7. Guaranteed by design. Not subject to production testing. 8. Short duration pulse test used to minimize self-heating effect. 2 of 7 DMJ70H1D3SJ3 January 2016 Diodes Incorporated www.diodes.com Document number: DS37825 Rev. 4 - 2 NEW PRODUCT