SH8MA2 30V Nch+Pch Power MOSFET Datasheet llOutline Tr1:Nch Tr2:Pch Symbol V 30V -30V DSS SOP8 R (Max.) 80m 82m DS(on) I 4.5A 4.5A D P 2.7W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) Halogen Free llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Basic ordering unit (pcs) 2500 Taping code TB Marking SH8MA2 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Value Parameter Symbol Unit Tr1:Nch Tr2:Pch V Drain - Source voltage 30 -30 V DSS *1 Continuous drain current I 4.5 4.5 A D *2 I Pulsed drain current 12 12 A DP Gate - Source voltage V 20 20 V GSS *3 I Avalanche current, single pulse 4.0 -4.0 A AS *3 E Avalanche energy, single pulse 1.1 1.4 mJ AS *1 P 2.7 D *4 P Power dissipation (total) 2.0 W D *5 P 1.4 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/19 20170511 - Rev.001 2017 ROHM Co., Ltd. All rights reserved. SH8MA2 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *5 R - - 89.2 thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Type Conditions Unit Min. Typ. Max. Tr1 V = 0V, I = 1mA 30 - - GS D Drain - Source breakdown V V (BR)DSS voltage Tr2 V = 0V, I = -1mA -30 - - GS D V I = 1mA, referenced to 25 Tr1 - 21 - (BR)DSS D Breakdown voltage mV/ temperature coefficient T I = -1mA, referenced to 25 j Tr2 - -22 - D V = 30V, V = 0V Tr1 - - 1 DS GS Zero gate voltage I A DSS drain current V = -30V, V = 0V Tr2 - - -1 DS GS V = 0V, V = 20V Tr1 - - 100 DS GS Gate - Source I nA GSS leakage current Tr2 V = 0V, V = 20V - - 100 DS GS V = V , I = 1mA Tr1 1.0 - 2.5 DS GS D Gate threshold V V GS(th) voltage V = V , I = -1mA Tr2 -1.0 - -2.5 DS GS D I = 1mA, referenced to 25 V Tr1 - -3 - D GS(th) Gate threshold voltage mV/ temperature coefficient T I = -1mA, referenced to 25 Tr2 - 2.9 - j D V = 10V, I = 4.5A - 57 80 GS D Tr1 V = 4.5V, I = 4.0A - 88 125 GS D Static drain - source *6 R m DS(on) on - state resistance V = -10V, I = -4.5A - 63 82 GS D Tr2 V = -4.5V, I = -4.0A - 89 115 GS D Tr1 - 3.5 - R Gate resistance f=1MHz, open drain G Tr2 - 13 - V = 5.0V, I = 4.0A Tr1 1.7 - - DS D Forward Transfer *6 Y S fs Admittance V = -5.0V, I = -4.0A Tr2 2.0 - - DS D *1 Pw 1s, Mounted on a ceramic board (30300.8mm), Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 Tr1:L 0.1mH, V = 15V, R = 25, Starting T = 25 Fig.1-1,1-2 DD G j Tr2: L 0.1mH, V = -15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a ceramic board (30300.8mm) *5 Mounted on a FR4 (25250.8mm) *6 Pulsed www.rohm.com 2017 ROHM Co., Ltd. All rights reserved. 2/19 20170511 - Rev.001