X-On Electronics has gained recognition as a prominent supplier of 2N7002DW-TP MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002DW-TP MOSFETs are a product manufactured by Micro Commercial Components (MCC). We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7002DW-TP Micro Commercial Components (MCC)

2N7002DW-TP electronic component of Micro Commercial Components (MCC)
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See Product Specifications
Part No.2N7002DW-TP
Manufacturer: Micro Commercial Components (MCC)
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Dual) 60V 115mA 200mW Surface Mount SOT-363
Datasheet: 2N7002DW-TP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0432 ea
Line Total: USD 0.43 
Availability - 1810
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
1810
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 10
Multiples : 10
10 : USD 0.0432
100 : USD 0.0352
300 : USD 0.0311
3000 : USD 0.028
6000 : USD 0.0255
9000 : USD 0.0243

16393
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2882
10 : USD 0.1826
100 : USD 0.0858
1000 : USD 0.0693
3000 : USD 0.0638

2623
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 5
Multiples : 5
5 : USD 0.2324
25 : USD 0.1666
100 : USD 0.147
130 : USD 0.1316
360 : USD 0.1246

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Continuous Drain Current
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Forward Transconductance - Min
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N7002DW-TP from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002DW-TP and other electronic components in the MOSFETs category and beyond.

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Features High Density Cell Design For Low R DS(ON) Voltage Controlled Small Signal Switch Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) 026)(7 Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature Range: -55C to +150C SOT-363 Thermal Resistance: 833C/W Junction to Ambient Parameter Rating Unit Symbol G Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V C GS B Drain Current I 340 mA D Total Power Dissipation P 150 mW D A M H Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. K L J D DIMENSIONS &LUFXLW DQG 3LQ 6FKHPDWLF INCHES MM DIM NOTE D1 G2 S2 MIN MAX MIN MAX 65 4 A 0.006 0.014 0.15 0.35 B 0.045 0.053 1.15 1.35 6 5 4 C 0.079 0.096 2.00 2.45 D 0.026 0.65 TYP. G 0.047 0.055 1.20 1.40 1 2 3 H 0.071 0.087 1.80 2.20 12 3 J ----- 0.004 ----- 0.10 S1 G1 D2 Dot Denotes Pin1 K0.031 0.043 0.801.10 L 0.010 0.018 0.26 0.46 M 0.003 0.006 0.08 0.15 68**(67( 62/ (5 3 / <287 Rev.3-4-12012020 1/4 MCCSEMI.COM 0DUNLQJ . 1 & + 11(/ 8 / : 1 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit V V =0V, I =250A Drain-Source Breakdown Voltage 60 V (BR)DSS GS D (2) V V =V , I =250A V 1.0 2.5 Gate-Threshold Voltage GS(th) DS GS D I Gate-Body Leakage V =0V, V =20V 10 GSS DS GS nA I V =60V, V =0V Zero Gate Voltage Drain Current 80 DSS DS GS V =10V, I =500mA 7 GS D (2) R Drain-Source On-Resistance DS(on) V =5V, I =50mA 7 GS D V =10V, I =500mA 3.75 GS D (2) V V Drain-Source On-Voltage DS(on) V =5V, I =50mA 0.375 GS D (2) g V =10V, I =200mA 80 ms fs DS D Forward Transconductance V V =0V, I =115mA Diode Forward Voltage 0.55 1.2 V SD GS S (3) C iss 50 Input Capacitance (3) C V =25V,V =0V, f=1MHz pF 25 Output Capacitance oss DS GS (3) C 5 Reverse Transfer Capacitance rss (3) t 20 d(on) Turn-On Time V =25V,V =10V,R =50 , DD GEN L ns I =500mA,R =25 D GEN (3) t 40 d(off) Turn-Off Time Note: 2. Pulse Test: Pulse Width 300s,Duty Cycle2%. 3. These Parameters Have No Way to Verify. Rev.3-4-12012020 2/4 MCCSEMI.COM : 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
MCC(Micro Commercial Components)
MICRO COMMERCIAL
Micro Commercial Co
Micro Commercial Components
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