2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual N-Channel MOSFET Case: SOT563 Low On-Resistance Case Material: Molded Plastic, Green Molding Low Gate Threshold Voltage Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminal Connections: See Diagram (Note 3) Low Input/Output Leakage Terminals: Finish - Matte Tin annealed over Copper leadframe. Ultra-Small Surface Mount Package Solderable per MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Weight: 0.003 grams (approximate) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at 2N7002VC/VAC Maximum Ratings T = +25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Drain-Gate Voltage R 1.0M V 60 V GS DGR Gate-Source Voltage (Note 5) Continuous 20 V V GSS Pulsed 40 Drain Current (Note 5) Continuous I 280 mA D Drain Current (Note 5) Pulsed I 1.5 A DM Thermal Characteristics T = +25C unless otherwise specified A Characteristic Symbol Value Units Total Power Dissipation P 150 mW D Thermal Resistance, Junction to Ambient 833 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics T = +25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 60 70 V V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current T = +25C 1.0 C I A V = 60V, V = 0V DSS DS GS 500 T = +125C C Gate-Body Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTIC (Note 6) Gate Threshold Voltage 1.0 2.5 V V V = V , I = 250A GS(th) DS GS D 7.5 V = 5V, I = 0.05A, GS D Static Drain-Source On-Resistance R DS (ON) 13.5 V = 10V, I = 0.5A, T = 125C GS D j On-State Drain Current I 0.5 1.0 A V = 10V, V = 7.5V D(ON) GS DS Forward Transconductance g 80 mS V = 10V, I = 0.2A FS DS D DYNAMIC CHARACTERISTICS Input Capacitance C 50 pF iss Output Capacitance 25 pF C V = 25V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance 5.0 pF C rss SWITCHING CHARACTERISTICS Turn-On Delay Time 20 ns t V = 30V, I = 0.2A, R = 150, D(ON) DD D L Turn-Off Delay Time 20 ns V = 10V, R = 25 t GEN GEN D(OFF) Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at