X-On Electronics has gained recognition as a prominent supplier of 2N7002LT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002LT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7002LT1G ON Semiconductor

2N7002LT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.2N7002LT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 60V 115mA N-Channel
Datasheet: 2N7002LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 0.0335 ea
Line Total: USD 0.67 
Availability - 78628
Ship by Wed. 04 Dec to Mon. 09 Dec
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
7781
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2002
10 : USD 0.1998
25 : USD 0.1993
100 : USD 0.1989
250 : USD 0.1985
500 : USD 0.1981
1000 : USD 0.1978
3000 : USD 0.1973
6000 : USD 0.1969

4836420
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0417
9000 : USD 0.0355
24000 : USD 0.0307
99000 : USD 0.0295

238262
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 0.195
10 : USD 0.1326
100 : USD 0.0679
1000 : USD 0.0607
3000 : USD 0.046
9000 : USD 0.0381
24000 : USD 0.0331
99000 : USD 0.0307

78628
Ship by Wed. 04 Dec to Mon. 09 Dec
MOQ : 20
Multiples : 20
20 : USD 0.0335
200 : USD 0.0262
600 : USD 0.0231
3000 : USD 0.0207
9000 : USD 0.0196
21000 : USD 0.0189

4833510
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0417
9000 : USD 0.0355
24000 : USD 0.0307
99000 : USD 0.0295

238262
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 472
Multiples : 1
472 : USD 0.0679
1000 : USD 0.0607
3000 : USD 0.046
9000 : USD 0.0381
24000 : USD 0.0331
99000 : USD 0.0307

261900
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 30000
Multiples : 30000
30000 : USD 0.0407
60000 : USD 0.0391
120000 : USD 0.0385
150000 : USD 0.038
270000 : USD 0.0373

4192
Ship by Wed. 27 Nov to Tue. 03 Dec
MOQ : 325
Multiples : 1
325 : USD 0.1985
500 : USD 0.1981
1000 : USD 0.1978
3000 : USD 0.1973
6000 : USD 0.1969

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
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We are delighted to provide the 2N7002LT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002LT1G and other electronic components in the MOSFETs category and beyond.

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The 2N7002LT1G is a N-channel, upgrade-enhanced, logic-level, 60V, 115mA MOSFET designed and manufactured by ON Semiconductor. It is packaged in a tiny SOT-23, allowing it to be integrated into a variety of applications, including portable devices. The device features dual-gate protection against Electrostatic Discharge (ESD) and is suitable for switching and linear applications. It features an ultra-low input capacitance and fast switching response. The low threshold voltage and on resistance of the 2N7002LT1G make it ideal for low voltage applications. The maximum drain current of the device is 115mA and the drain-source breakdown voltage is 60V. The device can also operate at temperatures ranging from -55C to 150C. Overall, the 2N7002LT1G is an excellent choice for low voltage switching and linear applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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