2N7002MTF N-Channel Small Signal MOSFET FEATURES BV = 60 V DSS Lower R DS(on) R = 5.0 DS(on) Improved Inductive Ruggedness Fast Switching Times I = 200 mA D Lower Input Capacitance Extended Safe Operating Area SOT-23 Improved High Temperature Reliability Product Summary 1.Gate 2. Source 3. Drain Part Number BV R (on) I DSS DS D 2N7002 60V 5.0 115mA Absolute Maximum Ratings Symbol Characteristic Value Units 60 V Drain-to-Source Voltage V DSS Continuous Drain Current (T =25) 115 C I mA D 73 Continuous Drain Current (T =100) C I Drain Current-Pulsed 800 mA DM 20 V Gate-to-Source Voltage V GS Total Power Dissipation (T =25) 0.2 W C P D 1.6 Linear Derating Factor mW/ Operating Junction and T , T - 55 to +150 J STG Storage Temperature Range Thermal Resistance Symbol Characteristic Typ. Max. Units R Junction-to-Ambient -- 625 /W JA Rev. C1N-Channel 2N7002MTF Small Signal MOSFET Electrical Characteristics (T =25 unless otherwise specified) C Symbol Characteristic Min. Typ. Max. Units Test Condition 60 - - V V = 0V, I = 250 A BV Drain-Source Breakdown Voltage GS D DSS V Gate Threshold Voltage 1.2 - 2.5 V V = V , I = 250 A GS(th) DS GS D Gate-Source Leakage, Forward - - 100 V = 20V GS I nA GSS Gate-Source Leakage, Reverse - - -100 V = -20V GS - - 1.0 V = 40V GS A Drain-to-Source Leakage Current I DSS - - 500 V = 40V, T = 125 GS C On-State Drain-Source Current A I 0.5 - - V = 10V, V = 10V D(ON) DS GS Static Drain-Source - - V = 10V, I = 0.5A 5.0 R GS D DS(on) On-State Resistance - 0.08 - S V = 15V, I = 0.2A g Forward Transconductance DS D fs - - Input Capacitance 50 C iss V = 25V, V = 0V, DS GS C - - 25 pF oss Output Capacitance f = 1.0MHz C - - 5 rss Reverse Transfer Capacitance t - - 20 d(on) Turn-On Delay Time V = 30V, I = 0.2A DD D t - - - r Rise Time ns R = 25 G t - - 20 Turn-Off Delay Time d(off) - - t Fall Time - f Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition I Continuous Source Current - - 115 mA S Integral reverse pn-diode In the MOSFET I Pulse Source Current - - 800 mA SD T = 25 , I = 115mA A S V Diode Forward Voltage - - 1.5 V SD V = 0V GS Notes Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature Pulse Test : Pulse Width = 250s, Duty Cycle 2% Essentially Independent of Operating Temperature