Product Information

2N7002PS,125

2N7002PS,125 electronic component of Nexperia

Datasheet
MOSFET N-CH 60 V 320 mA
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3795 ea
Line Total: USD 0.38

63495 - Global Stock
Ships to you between
Wed. 15 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
63495 - WHS 1


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1

Stock Image

2N7002PS,125
Nexperia

1 : USD 0.3795
10 : USD 0.2622
100 : USD 0.1208
1000 : USD 0.0759
3000 : USD 0.0655
9000 : USD 0.0517
24000 : USD 0.0506
45000 : USD 0.046
99000 : USD 0.0449

26190 - WHS 2


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 3000
Multiples : 3000

Stock Image

2N7002PS,125
Nexperia

3000 : USD 0.0496
9000 : USD 0.0484
24000 : USD 0.0474

2910 - WHS 3


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 3000
Multiples : 3000

Stock Image

2N7002PS,125
Nexperia

3000 : USD 0.0537
9000 : USD 0.0525
24000 : USD 0.0515

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Product
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

2N7002PS 60 V, 320 mA dual N-channel Trench MOSFET 23 November 2020 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 60 V DS amb V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 320 mA D GS amb Static characteristics (per transistor) R drain-source on-state V = 10 V I = 500 mA pulsed t - 1 1.6 DSon GS D p resistance 300 s 0.01 T = 25 C j 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm .Nexperia 2N7002PS 60 V, 320 mA dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S1 source1 D D 6 5 4 1 2 2 G1 gate1 3 D2 drain2 4 S2 source2 1 2 3 5 G2 gate2 TSSOP6 (SOT363) S G S G 1 1 2 2 6 D1 drain1 msd901 6. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002PS TSSOP6 plastic, surface-mounted package 6 leads 0.65 mm pitch 2.1 SOT363 mm x 1.25 mm x 0.95 mm body 7. Marking Table 4. Marking codes Type number Marking code 1 M8% 2N7002PS 1 % = placeholder for manufacturing site code 2N7002PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 23 November 2020 2 / 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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