X-On Electronics has gained recognition as a prominent supplier of 2N7002T MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002T MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7002T ON Semiconductor

2N7002T electronic component of ON Semiconductor
2N7002T ON Semiconductor
2N7002T MOSFETs
2N7002T  Semiconductors

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See Product Specifications
Part No. 2N7002T
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET N-Chan Enhancement Mode Field Effect
Datasheet: 2N7002T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1934 ea
Line Total: USD 0.97 
Availability - 2677
Ship by Tue. 06 May to Fri. 09 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
20370
Ship by Tue. 29 Apr to Mon. 05 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.0891
6000 : USD 0.0866
9000 : USD 0.0853
12000 : USD 0.0836
27000 : USD 0.0826
51000 : USD 0.0822
102000 : USD 0.0818
150000 : USD 0.0813

2910
Ship by Tue. 29 Apr to Mon. 05 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.105
6000 : USD 0.0947
9000 : USD 0.0935

5474
Ship by Tue. 29 Apr to Mon. 05 May
MOQ : 126
Multiples : 1
126 : USD 0.5151
201 : USD 0.3228
202 : USD 0.322
412 : USD 0.1579
414 : USD 0.1569
500 : USD 0.1485
1000 : USD 0.1296
3000 : USD 0.0925

2677
Ship by Tue. 06 May to Fri. 09 May
MOQ : 5
Multiples : 5
5 : USD 0.1934
50 : USD 0.1573
150 : USD 0.1193
500 : USD 0.0969
3000 : USD 0.0829
6000 : USD 0.0787

4
Ship by Fri. 25 Apr to Tue. 29 Apr
MOQ : 5
Multiples : 5
5 : USD 0.2352
25 : USD 0.168
100 : USD 0.1484
140 : USD 0.133
385 : USD 0.126

2141
Ship by Fri. 25 Apr to Tue. 29 Apr
MOQ : 1
Multiples : 1
1 : USD 0.546
10 : USD 0.3486
25 : USD 0.28
100 : USD 0.203
121 : USD 0.154

55290
Ship by Tue. 29 Apr to Mon. 05 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1022
6000 : USD 0.0835
9000 : USD 0.0795

5474
Ship by Tue. 29 Apr to Mon. 05 May
MOQ : 202
Multiples : 1
202 : USD 0.322
412 : USD 0.1579
414 : USD 0.1569
500 : USD 0.1485
1000 : USD 0.1296
3000 : USD 0.0925

20370
Ship by Tue. 29 Apr to Mon. 05 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1165
6000 : USD 0.1089
9000 : USD 0.1072
12000 : USD 0.1051
27000 : USD 0.1039

1091
Ship by Tue. 29 Apr to Mon. 05 May
MOQ : 410
Multiples : 1
410 : USD 0.4732

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Width
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the 2N7002T from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002T and other electronic components in the MOSFETs category and beyond.

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The 2N7002T is a MOSFET N-Channel Enhancement Mode Field Effect Transistor manufactured by ON Semiconductor. It is an enhancement mode field-effect transistor optimized for low-voltage switching applications, making it ideal for battery operation in portable devices such as cell phones, tablets, and wearables, as well as in consumer and industrial electronics. It offers an ultra-low on resistance of 1.3 milliohms and features low gate drive power with a breakdown voltage of 20 volts and a rated drain-source voltage of 60 volts. It is suitable for 5.0V logic level applications as well as meeting the needs of industrial circuits, and is capable of withstanding a maximum power dissipation of 350mW. The 2N7002T is provided in a surface mount SOT-23-3 package and is halogen free.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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