The 2N7002T is a MOSFET N-Channel Enhancement Mode Field Effect Transistor manufactured by ON Semiconductor. It is an enhancement mode field-effect transistor optimized for low-voltage switching applications, making it ideal for battery operation in portable devices such as cell phones, tablets, and wearables, as well as in consumer and industrial electronics. It offers an ultra-low on resistance of 1.3 milliohms and features low gate drive power with a breakdown voltage of 20 volts and a rated drain-source voltage of 60 volts. It is suitable for 5.0V logic level applications as well as meeting the needs of industrial circuits, and is capable of withstanding a maximum power dissipation of 350mW. The 2N7002T is provided in a surface mount SOT-23-3 package and is halogen free.