X-On Electronics has gained recognition as a prominent supplier of 2N7002T MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002T MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7002T ON Semiconductor

2N7002T electronic component of ON Semiconductor
2N7002T ON Semiconductor
2N7002T MOSFETs
2N7002T  Semiconductors

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See Product Specifications
Part No. 2N7002T
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET N-Chan Enhancement Mode Field Effect
Datasheet: 2N7002T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0916 ea
Line Total: USD 274.8 
Availability - 20370
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
20370
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.0916
6000 : USD 0.0891
9000 : USD 0.0878
12000 : USD 0.0861
27000 : USD 0.0851
51000 : USD 0.0844
102000 : USD 0.0811
150000 : USD 0.0808

5767
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 135
Multiples : 1
135 : USD 0.4807
212 : USD 0.3072
226 : USD 0.2879
413 : USD 0.1573
434 : USD 0.1498
500 : USD 0.1451
1000 : USD 0.1321
3000 : USD 0.0925

14550
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.0962
6000 : USD 0.0945
9000 : USD 0.09
12000 : USD 0.0892
15000 : USD 0.0872

2051
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 5
Multiples : 5
5 : USD 0.2888
50 : USD 0.2289
150 : USD 0.1742
500 : USD 0.1322
3000 : USD 0.1121
6000 : USD 0.1056

43
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 5
Multiples : 5
5 : USD 0.2128
25 : USD 0.154
100 : USD 0.1358
140 : USD 0.1246
385 : USD 0.1176

2182
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.462
10 : USD 0.3556
25 : USD 0.2772
100 : USD 0.1792
121 : USD 0.1442

5767
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 226
Multiples : 1
226 : USD 0.2879
413 : USD 0.1573
434 : USD 0.1498
500 : USD 0.1451
1000 : USD 0.1321
3000 : USD 0.0925

20370
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1239
6000 : USD 0.1159
9000 : USD 0.1141
12000 : USD 0.112
27000 : USD 0.1107

11640
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.49

37830
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1584

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Width
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the 2N7002T from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002T and other electronic components in the MOSFETs category and beyond.

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The 2N7002T is a MOSFET N-Channel Enhancement Mode Field Effect Transistor manufactured by ON Semiconductor. It is an enhancement mode field-effect transistor optimized for low-voltage switching applications, making it ideal for battery operation in portable devices such as cell phones, tablets, and wearables, as well as in consumer and industrial electronics. It offers an ultra-low on resistance of 1.3 milliohms and features low gate drive power with a breakdown voltage of 20 volts and a rated drain-source voltage of 60 volts. It is suitable for 5.0V logic level applications as well as meeting the needs of industrial circuits, and is capable of withstanding a maximum power dissipation of 350mW. The 2N7002T is provided in a surface mount SOT-23-3 package and is halogen free.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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