Product Information

2N7002PW

2N7002PW electronic component of Nexperia

Datasheet
MOSFET, N CH, 60V, 0.3A, SOT323
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

500: USD 0.1911 ea
Line Total: USD 95.55

0 - Global Stock
MOQ: 500  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 500
Multiples : 1

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2N7002PW
Nexperia

500 : USD 0.0884
1500 : USD 0.0843

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Current Id Max
Operating Temperature Min
Operating Temperature Range
Voltage Vgs Max
LoadingGif

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Additional Infomation About Product

2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level compatible Very fast switching 1.3 Applications High-speed line driver Relay driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T =25C --60 V DS amb voltage V gate-source -20 - 20 V GS voltage 1 I drain current V =10V T =25C --310mA D GS amb Static characteristics R drain-source V =10V I =500 mA -1 1.6 DSon GS D on-state T =25C t 300 s pulsed j p resistance 0.01 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .NXP Semiconductors 2N7002PW 60 V, 310 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2S source 3 D drain G 12 mbb076 S SOT323 (SC-70) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002PW SC-70 plastic surface-mounted package 3 leads SOT323 4. Marking Table 4. Marking codes 1 Type number Marking code 2N7002PW X8% 1 % = -: made in Hong Kong % = p: made in Hong Kong % = t: made in Malaysia % = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T =25C - 60 V DS amb V gate-source voltage -20 20 V GS 1 I drain current V =10V T =25C - 310 mA D GS amb 1 V =10V T = 100 C - 240 mA GS amb I peak drain current T = 25 C single pulse t 10 s - 1.2 A DM amb p 2 P total power dissipation T =25C - 260 mW tot amb 1 - 310 mW T = 25 C - 830 mW sp T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg Source-drain diode 1 I source current T =25C - 310 mA S amb 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . 2N7002PW All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 29 July 2010 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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