Product Information

2PA1774R,115

2PA1774R,115 electronic component of NXP

Datasheet
Trans GP BJT PNP 50V 0.15A Automotive 3-Pin SC-75 T/R

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

8475: USD 0.0143 ea
Line Total: USD 121.19

30106 - Global Stock
Ships to you between
Fri. 17 May to Wed. 22 May
MOQ: 8475  Multiples: 1
Pack Size: 1
Availability Price Quantity
30106 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 8475
Multiples : 1
8475 : USD 0.0143

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Emitter- Base Voltage Vebo
Brand
Gain Bandwidth Product Ft
Maximum Dc Collector Current
Pd - Power Dissipation
Factory Pack Quantity :
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2PA1774 PNP general-purpose transistor Rev. 05 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP transistor in a SOT416 (SC-75) plastic package. The NPN complement is 2PC4617. 1.2 Features Low current (max. 150 mA) Low voltage (max. 50 V) 1.3 Applications General-purpose switching and amplification in communication, Electronic Data Processing (EDP) and consumer applications. 2. Pinning information Table 1. Pinning Pin Description Simplified outline Symbol 1base 3 3 2emitter 3 collector 1 12 2 sym013 3. Ordering information Table 2. Ordering information Type number Package Name Description Version 2PA1774Q SC-75 plastic surface mounted package 3 leads SOT416 2PA1774R 2PA1774SNXP Semiconductors 2PA1774 PNP general-purpose transistor 4. Marking Table 3. Marking codes Type number Marking code 2PA1774Q YQ 2PA1774R YR 2PA1774S YS 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 60 V CBO V collector-emitter voltage open base - 50 V CEO V emitter-base voltage open collector - 6V EBO I collector current (DC) - 150 mA C I peak collector current - 200 mA CM I peak base current - 100 mA BM 1 P total power dissipation T 25 C -150 mW tot amb T storage temperature 65 +150 C stg T junction temperature - 150 C j T ambient temperature 65 +150 C amb 1 Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit 1 R thermal resistance from --833 K/W th(j-a) junction to ambient 1 Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 2PA1774 5 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 17 November 2009 2 of 7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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