X-On Electronics has gained recognition as a prominent supplier of PMDPB30XN MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMDPB30XN MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMDPB30XN Nexperia

PMDPB30XN electronic component of Nexperia
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See Product Specifications
Part No.PMDPB30XN
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET, DUAL N-CH, 20V, DFN2020
Datasheet: PMDPB30XN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.738 ea
Line Total: USD 3.69 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 5
Multiples : 1
5 : USD 0.738
10 : USD 0.5492
100 : USD 0.3052
500 : USD 0.2618
1000 : USD 0.2174
5000 : USD 0.1868

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
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We are delighted to provide the PMDPB30XN from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMDPB30XN and other electronic components in the MOSFETs category and beyond.

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PMDPB30XN 20 V, dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction 1.3 Applications Charging switch for portable devices DC-to-DC converters Small brushless DC motor drive Power management in battery-driven portables Hard disc and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 20 V DS j V gate-source voltage -12 - 12 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 5.3 A D GS amb Static characteristics (per transistor) R drain-source on-state V = 4.5 V I = 3 A T = 25 C - 32 40 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this productNXP Semiconductors PMDPB30XN 20 V, dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source TR1 6 5 4 2 G1 gate TR1 7 8 3 D2 drain TR2 4 S2 source TR2 1 2 3 G1 S1 S2 G2 5 G2 gate TR2 017aaa254 Transparent top view 6 D1 drain TR1 DFN2020-6 (SOT1118) 7 D1 drain TR1 8 D2 drain TR2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDPB30XN DFN2020-6 plastic thermal enhanced ultra thin small outline package no SOT1118 leads 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMDPB30XN 1V 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T = 25 C - 20 V DS j V gate-source voltage -12 12 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - 5.3 A D GS amb V = 4.5 V T = 25 C 1 - 4 A GS amb V = 4.5 V T = 100 C 1 - 2.6 A GS amb I peak drain current T = 25 C single pulse t 10 s - 12 A DM amb p PMDPB30XN All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 6 July 2012 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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