X-On Electronics has gained recognition as a prominent supplier of PMDPB55XP,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMDPB55XP,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMDPB55XP,115 Nexperia

PMDPB55XP,115 electronic component of Nexperia
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Part No.PMDPB55XP,115
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET 20V, Dual P-Channel Trench MOSFET
Datasheet: PMDPB55XP,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5439 ea
Line Total: USD 0.54 
Availability - 12519
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4127
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 693
Multiples : 1
693 : USD 0.1875
1000 : USD 0.1843
3000 : USD 0.1812

12519
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5439
10 : USD 0.3726
100 : USD 0.2599
500 : USD 0.2036
1000 : USD 0.1875
3000 : USD 0.1794
6000 : USD 0.176
9000 : USD 0.1633
24000 : USD 0.1552

5820
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 6000
Multiples : 6000
6000 : USD 0.1985
9000 : USD 0.1804
24000 : USD 0.1712

4127
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 43
Multiples : 1
43 : USD 0.1875

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PMDPB55XP,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMDPB55XP,115 and other electronic components in the MOSFETs category and beyond.

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PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 3 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Trench MOSFET technology Exposed drain pad for excellent thermal conduction 1.3 Applications Charging switch for portable devices Power management in battery-driven portables DC/DC converters Hard disc and computing power Small brushless DC motor drive management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T=25C ---20 V DS j V gate-source voltage -12 - 12 V GS 1 I drain current V =-4.5V T =25C t 5 s ---4.5 A D GS amb Static characteristics (per transistor) R drain-source on-state V =-4.5V I =-3.4A T = 25 C - 55 70 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm .PMDPB55XP Nexperia 20 V, dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 D1 D2 6 54 2 G1 gate TR1 3D2 drain TR2 78 4S2 source TR2 5 G2 gate TR2 123 6D1 drain TR1 G1 S1 S2 G2 017aaa258 Transparent top view 7D1 drain TR1 SOT1118 (DFN2020-6) 8D2 drain TR2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDPB55XP DFN2020-6 plastic thermal enhanced ultra thin small outline package SOT1118 no leads 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMDPB55XP 1Z PMDPB55XP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 4 June 2012 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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