PMDPB56XNEAX Nexperia

PMDPB56XNEA 30 V, dual N-channel Trench MOSFET 19 April 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Leadless medium power SMD plastic package: 2 2 0.65 mm Tin-plated 100 % solderable side pads for optical solder inspection ElectroStatic Discharge (ESD) protection > 2 kV HBM AEC-Q101 qualified 3. Applications LED driver Power management Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -12 - 12 V GS I drain current V = 4.5 V T = 25 C 1 - - 3.1 A D GS amb Static characteristics (per transistor) R drain-source on-state V = 4.5 V I = 3.1 A T = 25 C - 55 72 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMDPB56XNEA 30 V, dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source TR1 6 5 4 2 G1 gate TR1 7 8 G1 3 D2 drain TR2 G2 4 S2 source TR2 1 2 3 5 G2 gate TR2 Transparent top view S1 S2 6 D1 drain TR1 017aaa256 DFN2020D-6 (SOT1118D) 7 D1 drain TR1 8 D2 drain TR2 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDPB56XNEA DFN2020D-6 DFN2020D-6: plastic, thermally enhanced ultra thin and SOT1118D small outline package no leads 6 terminals body 2 x 2 x 0.65 mm 7. Marking Table 4. Marking codes Type number Marking code PMDPB56XNEA 3A PMDPB56XNEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 April 2016 2 / 17