X-On Electronics has gained recognition as a prominent supplier of 2N7002LT3G MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002LT3G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7002LT3G ON Semiconductor

2N7002LT3G electronic component of ON Semiconductor
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See Product Specifications
Part No.2N7002LT3G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 60V 115mA N-Channel
Datasheet: 2N7002LT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
348: USD 0.022 ea
Line Total: USD 7.66 
Availability - 67900
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 348  Multiples: 1
Pack Size: 1
Availability Price Quantity
145500
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 10000
Multiples : 10000
10000 : USD 0.0361
30000 : USD 0.0341
50000 : USD 0.0305
100000 : USD 0.03
150000 : USD 0.0296
250000 : USD 0.0291
500000 : USD 0.0287

174600
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 10000
Multiples : 10000
10000 : USD 0.022

67900
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 28
Multiples : 1
28 : USD 0.1833
42 : USD 0.1238
100 : USD 0.0636
1000 : USD 0.0514
2500 : USD 0.0418
10000 : USD 0.022

144
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 28
Multiples : 1
28 : USD 0.1868
28 : USD 0.1863
28 : USD 0.1856
100 : USD 0.1851

145500
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 10000
Multiples : 10000
10000 : USD 0.0442
30000 : USD 0.0417
50000 : USD 0.0373
100000 : USD 0.0367
150000 : USD 0.0363

164900
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 10000
Multiples : 10000
10000 : USD 0.022

67900
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 348
Multiples : 1
348 : USD 0.022

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the 2N7002LT3G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002LT3G and other electronic components in the MOSFETs category and beyond.

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MOSFET N-Channel, Small Signal, SOT-23 60 V, 115 mA 2N7002L, 2V7002L Features www.onsemi.com 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and V R MAX I MAX (BR)DSS DS(on) D PPAP Capable (2V7002L) 7.5 10 V, These Devices are PbFree, Halogen Free/BFR Free and are RoHS 60 V 115 mA 500 mA Compliant NChannel 3 MAXIMUM RATINGS Rating Symbol Value Unit DrainSource Voltage V 60 Vdc DSS DrainGate Voltage (R = 1.0 M ) V 60 Vdc GS DGR 1 Drain Current I 115 mAdc D I 75 Continuous T = 25C (Note 1) D C I 800 DM Continuous T = 100C (Note 1) C 2 Pulsed (Note 2) GateSource Voltage MARKING V 20 Vdc 3 Continuous GS V 40 Vpk GSM DIAGRAM Nonrepetitive (t 50 s) p 1 THERMAL CHARACTERISTICS 702 M 2 Characteristic Symbol Max Unit SOT23 Total Device Dissipation FR5 Board P CASE 318 D 1 225 mW (Note 3) T = 25C STYLE 21 A 1.8 mW/C Derate above 25C 702 = Device Code R 556 C/W JA Thermal Resistance, JunctiontoAmbient M = Date Code* Total Device Dissipation P = PbFree Package D 300 mW (Note 4) Alumina Substrate, T = 25C (Note: Microdot may be in either location) A 2.4 mW/C Derate above 25C *Date Code orientation and/or position may R 417 C/W JA Thermal Resistance, JunctiontoAmbient vary depending upon manufacturing location. Junction and Storage Temperature T , T 55 to C J stg +150 ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Device Package Shipping assumed, damage may occur and reliability may be affected. 2N7002LT1G 3,000 Tape & Reel 1. The Power Dissipation of the package may result in a lower continuous drain current. SOT23 2N7002LT3G 10,000 Tape & Reel 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. (PbFree) 3. FR5 = 1.0 x 0.75 x 0.062 in. 2N7002LT7G 3,500 Tape & Reel 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. 2V7002LT1G 3,000 Tape & Reel 2V7002LT3G 10,000 Tape & Reel SOT23 (PbFree) 2N7002LT1H* 3,000 Tape & Reel 2N7002LT7H* 3,500 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Not for new design. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: December, 2019 Rev. 10 2N7002L/D2N7002L, 2V7002L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage V 60 Vdc (BR)DSS (V = 0, I = 10 Adc) GS D Zero Gate Voltage Drain Current T = 25C I 1.0 Adc J DSS (V = 0, V = 60 Vdc) T = 125C 500 GS DS J GateBody Leakage Current, Forward I 100 nAdc GSSF (V = 20 Vdc) GS GateBody Leakage Current, Reverse I 100 nAdc GSSR (V = 20 Vdc) GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V 1.0 2.5 Vdc GS(th) (V = V , I = 250 Adc) DS GS D OnState Drain Current I 500 mA D(on) (V 2.0 V , V = 10 Vdc) DS DS(on) GS Static DrainSource OnState Voltage V Vdc DS(on) (V = 10 Vdc, I = 500 mAdc) 3.75 GS D (V = 5.0 Vdc, I = 50 mAdc) 0.375 GS D Static DrainSource OnState Resistance r Ohms DS(on) (V = 10 V, I = 500 mAdc) T = 25C 7.5 GS D C T = 125C 13.5 C (V = 5.0 Vdc, I = 50 mAdc) T = 25C 7.5 GS D C T = 125C 13.5 C Forward Transconductance g 80 mS FS (V 2.0 V , I = 200 mAdc) DS DS(on) D DYNAMIC CHARACTERISTICS Input Capacitance C 50 pF iss (V = 25 Vdc, V = 0, f = 1.0 MHz) DS GS Output Capacitance C 25 pF oss (V = 25 Vdc, V = 0, f = 1.0 MHz) DS GS Reverse Transfer Capacitance C 5.0 pF rss (V = 25 Vdc, V = 0, f = 1.0 MHz) DS GS SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 20 ns d(on) (V = 25 Vdc, I 500 mAdc, DD D R = 25 , R = 50 , V = 10 V) G L gen TurnOff Delay Time t 40 ns d(off) BODYDRAIN DIODE RATINGS Diode Forward OnVoltage V 1.5 Vdc SD (I = 115 mAdc, V = 0 V) S GS Source Current Continuous I 115 mAdc S (Body Diode) Source Current Pulsed I 800 mAdc SM Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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