BSS138L, BVSS138L Power MOSFET 200 mA, 50 V NChannel SOT23 Typical applications are DCDC converters, power management in www.onsemi.com portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 200 mA, 50 V Features R = 3.5 DS(on) Low Threshold Voltage (V : 0.85 V1.5 V) Makes it Ideal for GS(th) Low Voltage Applications NChannel 3 Miniature SOT23 Surface Mount Package Saves Board Space BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) 2 A Rating Symbol Value Unit DraintoSource Voltage V 50 Vdc MARKING DSS 3 DIAGRAM GatetoSource Voltage Continuous V 20 Vdc GS Drain Current mA 1 Continuous T = 25C I 200 A D 2 J1 M Pulsed Drain Current (t 10 s) I 800 p DM SOT23 Total Power Dissipation T = 25C P 225 mW A D CASE 318 1 STYLE 21 Operating and Storage Temperature T , T 55 to 150 C J stg Range J1 = Device Code Thermal Resistance, R 556 C/W M = Date Code* JA JunctiontoAmbient = PbFree Package (Note: Microdot may be in either location) Maximum Lead Temperature for T 260 C L Soldering Purposes, for 10 seconds *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping BSS138LT1G, SOT23 3,000 / Tape & Reel BVSS138LT1G (PbFree) BSS138LT7G SOT23 3,500 / Tape & Reel (PbFree) BSS138LT3G, SOT23 10,000 / Tape & Reel BVSS138LT3G (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: March, 2019 Rev. 12 BSS138LT1/DBSS138L, BVSS138L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 50 Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) GS D Zero Gate Voltage Drain Current I Adc DSS (V = 25 Vdc, V = 0 Vdc, 25C) 0.1 DS GS (V = 50 Vdc, V = 0 Vdc, 25C) 0.5 DS GS (V = 50 Vdc, V = 0 Vdc, 150C) 5.0 DS GS GateSource Leakage Current (V = 20 Vdc, V = 0 Vdc) I 0.1 Adc GS DS GSS ON CHARACTERISTICS (Note 1) GateSource Threshold Voltage V 0.85 1.5 Vdc GS(th) (V = V , I = 1.0 mAdc) DS GS D Static DraintoSource OnResistance r DS(on) (V = 2.75 Vdc, I < 200 mAdc, T = 40C to +85C) 5.6 10 GS D A (V = 5.0 Vdc, I = 200 mAdc) 3.5 GS D Forward Transconductance g 100 mmhos fs (V = 25 Vdc, I = 200 mAdc, f = 1.0 kHz) DS D DYNAMIC CHARACTERISTICS Input Capacitance (V = 25 Vdc, V = 0, f = 1 MHz) C 40 50 pF DS GS iss Output Capacitance (V = 25 Vdc, V = 0, f = 1 MHz) C 12 25 DS GS oss Transfer Capacitance (V = 25 Vdc, V = 0, f = 1 MHz) C 3.5 5.0 DG GS rss SWITCHING CHARACTERISTICS (Note 2) ns TurnOn Delay Time t 20 d(on) (V = 30 Vdc, I = 0.2 Adc,) DD D TurnOff Delay Time t 20 d(off) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperature. www.onsemi.com 2