2SJ360 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L MOSV) 2SJ360 High Speed, High current Switching Applications Unit: mm Chopper Regulator, DCDC Converter and Motor Drive Applications z 4-V gate drive z Low drain source ON resistance : R = 0.55 (typ.) DS (ON) z High forward transfer admittance : Y = 0.9 S (typ.) fs z Low leakage current : I = 100 A (max) (V = 60 V) DSS DS z Enhancement mode : V = 0.8 to 2.0 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain source voltage V 60 V DSS Drain gate voltage (R = 20 k ) V 60 V GS DGR Gatesource voltage V 20 V GSS DC (Note 1) I 1 A D Drain current Pulse (Note 1) I 4 A DP Drain power dissipation P 0.5 W JEDEC D Drain power dissipation (Note 2) P 1.5 W D JEITA SC-62 Channel temperature T 150 C ch TOSHIBA 25K1B Storage temperature range T 55 to 150 C stg Weight: 0.05 g (typ.) Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: Mounted on a ceramic substrate (25.4 mm 25.4 mm 0.8 mm) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to R 250 C / W th (cha) ambient This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SJ360 Marking Note 4: A line to the right of a Lot No. identifies the indication of Part No. product Labels. (or abbreviation code) Without a line: Pb /INCLUDES > MCV With a line: G /RoHS COMPATIBLE or G /RoHS Pb Z 8 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Note 4 The RoHS is the Directive 2002/95/EC of the European Parliament Lot No. and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 16 V, V = 0 V 10 A GSS GS DS Drain cut off current I V = 60 V, V = 0 V 100 A DSS DS GS Drain source breakdown V I = 10 mA, V = 0 V 60 V (BR) DSS D GS voltage Gate threshold voltage V V = 10 V, I = 1 mA 0.8 2.0 V th DS D V = 4 V, I = 0.5 A 0.86 1.2 GS D Drain source ON resistance R DS (ON) V = 10 V, I = 0.5 A 0.55 0.73 GS D Forward transfer admittance Y V = 10 V, I = 0.5 A 0.5 1.0 S fs DS D Input capacitance C 155 iss V = 10 V, V = 0 V, f = 1 MHz pF Reverse transfer capacitance C 22 rss DS GS Output capacitance C 75 oss I = 0.5A Rise time t D 17 r 0V V V OUT GS 10V Turn on time t 20 on R = 60 L Switching time ns Fall time t 20 f V 30V DD Duty 1%, t = 10s w Turn off time t 100 off Total gate charge (Gatesource Q 6.5 g plus gate drain) V 48 V, V = 10 V, DD GS nC I = 1 A Gatesource charge Q 4.5 gs D Gatedrain (miller) charge Q 2.0 gd SourceDrain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current 1 A I DR (Note 1) Pulse drain reverse current I 4 A DRP (Note 1) Forward voltage (diode) V I = 1 A, V = 0 V 1.8 V DSF DR GS Reverse recovery time t 50 ns rr I = 1 A, V = 0 V DR GS dI / dt = 50 A / s DR Reverse recovery charge Q 45 nC rr 2 2009-09-29 50