2SK2009 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Unit: mm Analog Switch Applications High input impedance. Low gate threshold voltage: V = 0.5 to 1.5 V th Excellent switching times: t = 0.06 s (typ.) on t = 0.12 s (typ.) off Low drain-source ON resistance: R = 1.2 (typ.) DS (ON) Small package Enhancement-mode Marking Equivalent Circuit JEDEC TO-236MOD JEITA SC-59 Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-3F1F Characteristics Symbol Rating Unit Weight: 0.012 g (typ.) Drain-source voltage V 30 V DS Gate-source voltage V 20 V GSS DC drain current I 200 mA D Drain power dissipation P 200 mW D Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is electrostatic sensitive device. Please handle with caution. Start of commercial production 1992-04 1 2014-03-01 2SK2009 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 10 V, V = 0 0.1 A GSS GS DS Drain-source breakdown voltage V I = 1 mA, V = 0 30 V (BR) DSS D GS Drain cut-off current I V = 30 V, V = 0 10 A DSS DS GS Gate threshold voltage V V = 3 V, I = 0.1 mA 0.5 1.5 V th DS D Forward transfer admittance Y V = 3 V, I = 50 mA 100 mS fs DS D Drain-source ON resistance R I = 50 mA, V = 2.5 V 1.2 2 DS (ON) D GS Input capacitance C V = 3 V, V = 0, f = 1 MHz 70 pF iss DS GS Reverse transfer capacitance C V = 3 V, V = 0, f = 1 MHz 23 pF rss DS GS Output capacitance C V = 3 V, V = 0, f = 1 MHz 58 pF oss DS GS Turn-on time t V = 3 V, I = 10 mA, V = 0 to 2.5 V 0.06 on DD D GS Switching time s Turn-off time t V = 3 V, I = 10 mA, V = 0 to 2.5 V 0.12 off DD D GS Switching Time Test Circuit 2 2014-03-01