X-On Electronics has gained recognition as a prominent supplier of 2SK209-GR(TE85L,F) JFET across the USA, India, Europe, Australia, and various other global locations. 2SK209-GR(TE85L,F) JFET are a product manufactured by Toshiba. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

2SK209-GR(TE85L,F) Toshiba

2SK209-GR(TE85L,F) electronic component of Toshiba
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Part No.2SK209-GR(TE85L,F)
Manufacturer: Toshiba
Category: JFET
Description: JFET N-Ch Junction FET 10mA -50V VGDS
Datasheet: 2SK209-GR(TE85L,F) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1693 ea
Line Total: USD 0.85

Availability - 133601
Ship by Mon. 05 Aug to Thu. 08 Aug
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
133520
Ship by Mon. 05 Aug to Thu. 08 Aug
MOQ : 5
Multiples : 5
5 : USD 0.1693
50 : USD 0.134
150 : USD 0.1168
500 : USD 0.1014
3000 : USD 0.0972
6000 : USD 0.0948

2206
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 1
Multiples : 1
1 : USD 0.949
5 : USD 0.3562
25 : USD 0.3133
57 : USD 0.2938
100 : USD 0.2821

60153
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 75
Multiples : 1
75 : USD 0.5427
120 : USD 0.3412
200 : USD 0.3397
500 : USD 0.1612
1000 : USD 0.1551
2000 : USD 0.154
3000 : USD 0.1492
6000 : USD 0.1434
12000 : USD 0.1405

2910
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.4862

1587
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 305
Multiples : 1
305 : USD 0.6029
500 : USD 0.5578
1000 : USD 0.5396

2910
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 305
Multiples : 1
305 : USD 0.6029
500 : USD 0.5578
1000 : USD 0.5396
2500 : USD 0.5236

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Series
Type
Brand
Gate-Source Cutoff Voltage
Cnhts
Hts Code
Maximum Drain Gate Voltage
Mxhts
Factory Pack Quantity :
Taric
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SK209-GR(TE85L,F) from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK209-GR(TE85L,F) and other electronic components in the JFET category and beyond.

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2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications Unit: mm High Y : Y = 15 mS (typ.) at V = 10 V, V = 0 fs fs DS GS High breakdown voltage: V = 50 V GDS Low noise: NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k DS D G High input impedance: I = 1 nA (max) at V = 30 V GSS GS Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Gate-drain voltage V 50 V GDS Gate current I 10 mA G Drain power dissipation P 150 mW D Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC TO-236 reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA SC-59 absolute maximum ratings. TOSHIBA 2-3F1B Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Weight: 0.012 g (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate cut-off current I V = 30 V, V = 0 1.0 nA GSS GS DS Gate-drain breakdown voltage V V = 0, I = 100 A 50 V (BR) GDS DS G I DSS Drain current V = 10 V, V = 0 1.2 14.0 mA DS GS (Note) Gate-source cut-off voltage V V = 10 V, I = 0.1 A 0.2 1.5 V GS (OFF) DS D Forward transfer admittance Y V = 10 V, V = 0, f = 1 kHz 4.0 15 mS fs DS GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 13 pF iss DS GS Reverse transfer capacitance C V = 10 V, I = 0, f = 1 MHz 3 pF rss DG D V = 10 V, R = 1 k DS G Noise figure NF (1) 5 dB I = 0.5 mA, f = 10 Hz D V = 10 V, R = 1 k DS G Noise figure NF (2) 1 dB I = 0.5 mA, f = 1 kHz D Note: I classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA DSS Marking Start of commercial production 1981-06 1 2014-03-01 2SK209 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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TS4

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