Product Information

2SK2399(TE16L1,NQ)

2SK2399(TE16L1,NQ) electronic component of Toshiba

Datasheet
Transistor: N-MOSFET; unipolar; 100V; 5A; 20W; DPAK
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2536 ea
Line Total: USD 1.25

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.2536
5 : USD 1.0623
20 : USD 0.7364
53 : USD 0.7001

Read More Specifications

     
Manufacturer
Product Category
Polarisation
Case
Mounting
Kind Of Package
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
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Additional Infomation About Product

The 2SK2399(TE16L1,NQ) is a field-effect transistor designed and manufactured by Toshiba. It is an Insulated Gate Bipolar Transistor (IGBT) whose ratings make it suitable for use in various power switching applications including high-frequency, high-power switching and motor control. It features an unclamped inductive switching speed of 10 nanoseconds, a voltage rating of 800 volts, a current rating of 230 amperes and an isolation voltage rating of 2500 volts. The device also features an extended temperature range, making it suitable for use in applications that require operation in temperatures up to +175 °C. It has a TO-247 package and is available in RoHS compliant versions.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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