2SK2615 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L MOSV) 2SK2615 DCDC Converter, Relay Drive and Motor Drive Unit: mm Applications z Low drain source ON resistance : R = 0.23 (typ.) DS (ON) z High forward transfer admittance : Y = 2.0 S (typ.) fs z Low leakage current : I = 100 A (max) (V = 60 V) DSS DS z Enhancement mode : V = 0.8 to 2.0 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain source voltage V 60 V DSS Drain gate voltage (R = 20 k ) V 60 V GS DGR Gatesource voltage V 20 V GSS DC (Note 1) I 2 D Drain current A Pulse (Note 1) I 6 DP Drain power dissipation P 0.5 W D JEDEC Drain power dissipation (Note 2) P 1.5 W D JEITA Channel temperature T 150 C ch TOSHIBA 2-5K1B Storage temperature range T 55 to 150 C stg Weight: 0.05 g (typ.) Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: Mounted on a ceramic substrate (25.4 mm 25.4 mm 0.8 mm) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to R 250 C / W th (cha) ambient This transistor is an electrostatic-sensitive device. Please handle with caution. Note 4: A line to the right of a Lot No. identifies the indication of Marking product Labels. Part No. (or abbreviation code) Without a line: Pb /INCLUDES > MCV With a line: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Z A The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of Note 4 certain hazardous substances in electrical and electronic equipment. Lot No. 1 2009-09-29 2SK2615 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 16 V, V = 0 V 10 A GSS GS DS Drain cut off current I V = 60 V, V = 0 V 100 A DSS DS GS Drain source breakdown voltage V I = 10 mA, V = 0 V 60 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 0.8 2.0 V th DS D VGS = 4 V, ID = 1 A 0.33 0.44 Drain source ON resistance R DS (ON) VGS = 10 V, ID = 1 A 0.23 0.30 Forward transfer admittance Y V = 10 V, I = 1 A 1.0 2.0 S fs DS D Input capacitance C 150 iss Reverse transfer capacitance C V = 10 V, V = 0 V, f = 1 MHz 25 pF rss DS GS Output capacitance C 70 oss Rise time t 25 r Turn on time t 30 on Switching time ns Fall time t 50 f Turn off time t 150 off Total gate charge (gatesource Q 6.0 g plus gate drain) V 48 V, V = 10 V, I = 2 A nC DD GS D Gatesource charge Q 4.6 gs Gatedrain (miller) Charge Q 1.4 gd SourceDrain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current I 2 A DR (Note 1) Pulse drain reverse current I 6 A DRP (Note 1) Forward voltage (diode) V I = 2 A, V = 0 V 1.5 V DSF DR GS Reverse recovery time t 100 ns rr I = 2 A, V = 0 V DR GS dI / dt = 50 A / s DR Reverse recovery charge Q 40 nC rr 2 2009-09-29