2SK3301 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK3301 Switching Regulatorand DC-DC Converter Applications Unit: mm Low drain-source on-resistance: R = 15 (typ.) DS(ON) High forward transfer admittance: Y = 0.65 S (typ.) fs Low leakage current: I = 100 A (max) (V = 720 V) DSS DS Enhancement mode: V = 2.4 to 3.4 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 900 V DSS Drain-gate voltage (R = 20 k ) V 900 V GS DGR Gate-source voltage V 30 V GSS DC (Note 1) I 1 D Drain current A Pulse I 2 DP (Note 1) JEDEC Drain power dissipation (Tc = 25C) P 20 W D Single pulse avalanche energy JEITA E 140 mJ AS (Note 2) TOSHIBA 2-7J1B Avalanche current I 1 A AR Weight: 0.36 g (typ.) Repetitive avalanche energy (Note 3) E 2.0 mJ AR Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 Thermal Characteristics Characteristics Symbol MaxUnit 1 Thermal resistance, channel to case R 6.25 C/W th (ch-c) Thermal resistance, channel to ambient R 125 C/W th (ch-a) 3 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: V = 90 V, T = 25C (initial), L = 257 mH, R = 25 , I = 1 A DD ch G AR Note 3: Repetitive rating: pulse width limited by max junction temperature This transistor is an electrostatic-sensitive device. Please handle with caution. Start of commercial production 1999-12 1 2013-11-01 2SK3301 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 30 V, V = 0 V 10 A GSS GS DS Gate-source breakdown voltage V I = 10 A, V = 0 V 30 V (BR) GSS G DS Drain cut-off current I V = 720 V, V = 0 V 100 A DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 900 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.4 3.4 V th DS D Drain-source ON resistance R V = 10 V, I = 0.5 A 15 20 DS (ON) GS D Forward transfer admittance Y V = 20 V, I = 0.5 A 0.3 0.65 S fs DS D Input capacitance C 165 pF iss Reverse transfer capacitance C V = 25 V, V = 0 V, f = 1 MHz 6 pF rss DS GS Output capacitance C 21 pF oss Rise time t 15 r I = 0.5 A D 10 V V OUT V GS 0 V Turn-on time t 60 on Switching time ns Fall time t 40 f V 400 V DD Turn-off time t 110 off Duty 1%, t = 10 s w Total gate charge Q 6 nC g (gate-source plus gate-drain) V 400 V, V = 10 V, I = 1 A DD GS D Gate-source charge Q 3 nC gs Gate-drain (miller) charge Q 3 nC gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current I 1 A DR (Note 1) Pulse drain reverse current I 2 A DRP (Note 1) Forward voltage (diode) V I = 1 A, V = 0 V 1.7 V DSF DR GS Reverse recovery time t I = 1 A, V = 0 V 1300 ns rr DR GS dI /dt = 100 A/ s Reverse recovery charge Q 1.95 C rr DR Marking Note : A line under a Lot No. identifies the indication of product Labels Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb K3301 Part No. (or abbreviation code) Please contact your TOSHIBA sales representative for details as to Lot No. environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2011/65/EU of the European Parliament and Note of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01 50 R = 800 L