2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. Output power: P = 7.0 W (min) O Gain: G = 11.4dB (min) P Drain efficiency: = 60% (min) D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSS Gain-source voltage V 10 V GSS Drain current I 3 A D Power dissipation P (Note 1) 20 W D JEDEC Channel temperature T 150 C ch Storage temperature range T 45 to 150 C JEITA stg TOSHIBA 2-5N1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.08 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Tc = 25C (When mounted on a 1.6 mm glass epoxy PCB) Marking 2 Type name UC F 1 3 ** Dot Lo No. 1. Gate 2. Source (heat sink) 3. Drain Caution Please take care to avoid generating static electricity when handling this transistor. Start of commercial production 2000-08 1 2014-03-01 2SK3476 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Drain cut-off current I V = 20 V, V = 0 V 5 A DSS DS GS Gate-source leakage current I V = 5 V 5 A GSS GS Threshold voltage V V = 7.2 V, I = 2 mA 0.55 1.05 1.55 V th DS D Drain-source on-voltage V V = 10 V, I = 75 mA 18 mV DS (ON) GS D Forward transconductance Y V = 7.2 V, I = 1 A 1 S fs DS DS Input capacitance C V = 7.2 V, V = 0 V, f = 1 MHz 53 pF iss DS GS Output capacitance C V = 7.2 V, V = 0 V, f = 1 MHz 49 pF oss DS GS Output power P 7 W O V = 7.2 V, DS Drain efficiency 60 % I = 500 mA (V = adjust), D idle GS f = 520 MHz, P = 500 mW, i Power gain G 11.4 dB P V = 6.0 V, DS Low voltage output power P 5 W OL I = 500 mA (V = adjust), idle GS f = 520 MHz, P = 500 mW, i V = 10 V, P = 7 W, DS O V = adjust, P = adjust, GS i Load mismatch No degradation f = 520 MHz, VSWR LOAD 20:1 all phase Note 1: These characteristic values are measured using measurement tools specified by Toshiba. Output Power Test Fixture (Test Condition: f = 520 MHz, V = 7.2 V, I = 500 mA, P = 500 mW) DS idle i C11 C5 R1 C4 C9 C10 P P i O C1 C2 C3 L1 L2 C6 C7 C8 Z = 50 Z = 50 G L C12 C13 C14 C15 R2 V V GS DS C1: 15 pF L1: 0.6 mm enamel wire, 5.8ID, 4T R1: 2.2 C2: 11 pF L2: 0.6 mm enamel wire, 5.8ID, 8T R2: 1.5 k C3: 9 pF C4: 30 pF C5: 30 pF C6: 11 pF C7: 8 pF C8: 9 pF C9: 2200 pF C10: 2200 pF C11: 2200 pF C12: 10000 pF C13: 10 F C14: 10000 pF C15: 10 F 2 2014-03-01