X-On Electronics has gained recognition as a prominent supplier of 2SK3492-TL-E MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2SK3492-TL-E MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2SK3492-TL-E ON Semiconductor

2SK3492-TL-E electronic component of ON Semiconductor
2SK3492-TL-E ON Semiconductor
2SK3492-TL-E MOSFETs
2SK3492-TL-E  Semiconductors

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See Product Specifications
Part No. 2SK3492-TL-E
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
Datasheet: 2SK3492-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
713: USD 0.5717 ea
Line Total: USD 407.62 
Availability - 0
MOQ: 713  Multiples: 713
Pack Size: 713
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 713
Multiples : 713
713 : USD 0.5717

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 505
Multiples : 1
505 : USD 0.9288

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 505
Multiples : 1
505 : USD 0.9288

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 505
Multiples : 1
505 : USD 0.9288

   
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We are delighted to provide the 2SK3492-TL-E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK3492-TL-E and other electronic components in the MOSFETs category and beyond.

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2SK3492 Ordering number : ENN8279 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3492 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V 60 V DSS Gate-to-Source Voltage V 20 V GSS Drain Current (DC) I 8A D Drain Current (Pulse) I PW 10s, duty cycle 1% 32 A DP 1W Allowable Power Dissipation P D Tc=25C15W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =60V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =4A 3 5 S DS D R (on)1 I =4A, V =10V 115 150 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =4A, V =4V 155 220 m DS D GS Input Capacitance Ciss V =20V, f=1MHz 300 pF DS Output Capacitance Coss V =20V, f=1MHz 54 pF DS Reverse Transfer Capacitance Crss V =20V, f=1MHz 34 pF DS Turn-ON Delay Time t (on) See specified Test Circuit. 8 ns d Rise Time t See specified Test Circuit. 32 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 30 ns d Fall Time t See specified Test Circuit. 44 ns f Continued on next page. 2011, SCILLC. All rights reserved. Publication Order Number: www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Jan-2011, Rev. 0 2SK3492/D2SK3492 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Total Gate Charge Qg V =30V, V =10V, I =8A 7.8 nC DS GS D Gate-to-Source Charge Qgs V =30V, V =10V, I =8A 2.4 nC DS GS D Gate-to-Drain Miller Charge Qgd V =30V, V =10V, I =8A 1.7 nC DS GS D Diode Forward Voltage V I =8A, V =0V 0.9 1.2 V SD S GS Package Dimensions Package Dimensions unit : mm unit : mm 7518-004 7003-004 6.5 2.3 6.5 2.3 5.0 0.5 5.0 0.5 4 4 0.5 0.85 0.85 0.7 1.2 12 3 0.6 0 to 0.2 0.6 0.5 1 : Gate 1 : Gate 1.2 2 : Drain 2 : Drain 12 3 3 : Source 3 : Source 4 : Drain 4 : Drain 2.3 2.3 2.3 2.3 SANYO : TP-FA SANYO : TP Switching Time Test Circuit V =30V DD V IN 10V I =4A D 0V R =7.5 L V V D OUT IN PW=10s D.C. 1% G P.G 50 2SK3492 S I -- V I -- V D DS D GS 8 8 V =10V DS 7 7 6 6 5 5 4 4 3 3 2 2 1 1 0 0 0123456 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Drain-to-Source Voltage, V -- V IT09598 Gate-to-Source Voltage, V -- V IT09599 DS GS Rev.0 I Page 2 of 4 I www.onsemi.com V =3.5V GS 4.0V 5.0V 6.0V 16.0V 25C 8.0V 10.0V 25C Ta=75C 75C Ta= --25C --25C Drain Current, I -- A D 0.8 1.6 5.5 1.5 7.5 7.0 Drain Current, I -- A D 0.8 5.5 1.5 2.5 7.0 1.2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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