2SK3492 Ordering number : ENN8279 N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3492 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V 60 V DSS Gate-to-Source Voltage V 20 V GSS Drain Current (DC) I 8A D Drain Current (Pulse) I PW 10s, duty cycle 1% 32 A DP 1W Allowable Power Dissipation P D Tc=25C15W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =60V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =4A 3 5 S DS D R (on)1 I =4A, V =10V 115 150 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =4A, V =4V 155 220 m DS D GS Input Capacitance Ciss V =20V, f=1MHz 300 pF DS Output Capacitance Coss V =20V, f=1MHz 54 pF DS Reverse Transfer Capacitance Crss V =20V, f=1MHz 34 pF DS Turn-ON Delay Time t (on) See specified Test Circuit. 8 ns d Rise Time t See specified Test Circuit. 32 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 30 ns d Fall Time t See specified Test Circuit. 44 ns f Continued on next page. 2011, SCILLC. All rights reserved. Publication Order Number: www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Jan-2011, Rev. 0 2SK3492/D2SK3492 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Total Gate Charge Qg V =30V, V =10V, I =8A 7.8 nC DS GS D Gate-to-Source Charge Qgs V =30V, V =10V, I =8A 2.4 nC DS GS D Gate-to-Drain Miller Charge Qgd V =30V, V =10V, I =8A 1.7 nC DS GS D Diode Forward Voltage V I =8A, V =0V 0.9 1.2 V SD S GS Package Dimensions Package Dimensions unit : mm unit : mm 7518-004 7003-004 6.5 2.3 6.5 2.3 5.0 0.5 5.0 0.5 4 4 0.5 0.85 0.85 0.7 1.2 12 3 0.6 0 to 0.2 0.6 0.5 1 : Gate 1 : Gate 1.2 2 : Drain 2 : Drain 12 3 3 : Source 3 : Source 4 : Drain 4 : Drain 2.3 2.3 2.3 2.3 SANYO : TP-FA SANYO : TP Switching Time Test Circuit V =30V DD V IN 10V I =4A D 0V R =7.5 L V V D OUT IN PW=10s D.C. 1% G P.G 50 2SK3492 S I -- V I -- V D DS D GS 8 8 V =10V DS 7 7 6 6 5 5 4 4 3 3 2 2 1 1 0 0 0123456 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Drain-to-Source Voltage, V -- V IT09598 Gate-to-Source Voltage, V -- V IT09599 DS GS Rev.0 I Page 2 of 4 I www.onsemi.com V =3.5V GS 4.0V 5.0V 6.0V 16.0V 25C 8.0V 10.0V 25C Ta=75C 75C Ta= --25C --25C Drain Current, I -- A D 0.8 1.6 5.5 1.5 7.5 7.0 Drain Current, I -- A D 0.8 5.5 1.5 2.5 7.0 1.2