2SK2841 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( MOSV) 2SK2841 Chopper Regulator, DCDC Converter and Motor Drive Unit: mm Applications z Low drain source ON resistance : R = 0.4 (typ.) DS (ON) z High forward transfer admittance : Y = 8.0 S (typ.) fs z Low leakage current : I = 100 A (max) (V = 400 V) DSS DS z Enhancement mode : V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain source voltage V 400 V DSS Drain gate voltage (R = 20 k ) V 400 V GS DGR Gatesource voltage V 30 V GSS DC (Note 1) I 10 A D Drain current Pulse (Note 1) I 40 A DP Drain power dissipation (Tc = 25C) P 80 W D JEDEC TO-220AB Single pulse avalanche energy E 360 mJ AS JEITA SC-46 (Note 2) TOSHIBA 2-10P1B Avalanche current I 10 A AR Repetitive avalanche energy (Note 3) E 8 mJ AR Weight: 2.0 g (typ.) Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 1.56 C / W th (chc) Thermal resistance, channel to ambient R 83.3 C / W th (cha) Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: V = 90 V, T = 25C (initial), L = 5.85 mH, R = 25 , I = 10 A DD ch G AR Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SK2841 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 25 V, V = 0 V 10 A GSS GS DS Gatesource breakdown voltage V I = 10 A, V = 0 V 30 V (BR) GSS G DS Drain cut off current I V = 400 V, V = 0 V 100 A DSS DS GS Drain source breakdown voltage V I = 10 mA, V = 0 V 400 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.0 4.0 V th DS D Drain source ON resistance R V = 10 V, I = 5.0 A 0.4 0.55 DS (ON) GS D Forward transfer admittance Y V = 10 V, I = 5.0 A 4.0 8.0 S fs DS D Input capacitance C 1340 iss Reverse transfer capacitance C V = 10 V, V = 0 V, f = 1 MHz 160 pF rss DS GS Output capacitance C 490 oss Rise time t 22 r Turn on time t 60 on Switching time ns Fall time t 32 f Turn off time t 140 off Total gate charge (gatesource Q 34 g plus gate drain) V 320 V, V = 10 V, I = 10 A nC DD GS D Gatesource charge Q 18 gs Gatedrain (miller) Charge Q 16 gd SourceDrain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current I 10 A DR (Note 1) Pulse drain reverse current I 40 A DRP (Note 1) Forward voltage (diode) V I = 10 A, V = 0 V 1.7 V DSF DR GS Reverse recovery time t 350 ns rr I = 10 A, V = 0 V DR GS dI / dt = 100 A / s DR Reverse recovery charge Q 2.6 C rr Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to K2841 Part No. (or abbreviation code) Lot No. environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament Note 4 and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29