2SK3074TE12LF Toshiba

2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHFAND UHF-BAND POWER AMPLIFIER Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. z Output Power : P 630mW O z Power Gain : G 14.9dB P z Drain Efficiency : 45% D ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Characteristics Symbol Rating Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 25 V GSS Drain Current I 1 A D Drain Power Dissipation P (Note 1) 3 W D JEDEC Channel Temperature T 150 C ch JEITA SC62 Storage Temperature Range T 45 to 150 C TOSHIBA 25K1D stg Weight: 0.05 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Tc = 25C When mounted on a 1.6mm glass epoxy PCB MARKING Part No. (or abbreviation code) Note 2: A line beside a Lot No. identifies the indication of product Labels. W A Without a line: Pb /INCLUDES > MCV With a line: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental Note 2 Lot No. 1 2 3 matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic 1. Gate equipment. 2. Source 3. Drain Caution: This device is sensitive to electrostatic discharge. Start of commercial production Please make enough tool and equipment earthed when you handle. 1998-06 1 2014-03-01 2SK3074 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Output Power P 630 mW O V = 9.6V DS Drain Efficiency 45 Iidle = 50mA (V = adjust) % D GS f = 520MHz, P = 20mW i Power Gain G 14.9 dB P Gate Threshold Voltage V V = 9.6V, I = 0.5mA 1.4 1.9 2.4 V th DS D Drain Cut-off Current I V = 20V, V = 0 10 A DSS DS GS Gate-Source Leakage Current I V = 10V, V = 0 5 A GSS GS DS Note 3: These characteristic values are measured using measurement tools specified by Toshiba. RF OUTPUT POWER TEST FIXTURE 2 2014-03-01