2SK3132 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( MOSV) 2SK3132 Chopper Regulator DCDC Converter and Motor Drive Unit: mm Applications z Low drain source ON resistance : R = 0.07 (typ.) DS (ON) z High forward transfer admittance : Y = 33 S (typ.) fs z Low leakage current : I = 100 A (max) (V = 500 V) DSS DS z Enhancement mode : V = 2.4 to 3.4 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain source voltage V 500 V DSS Drain gate voltage (R = 20 k ) V 500 V GS DGR Gatesource voltage V 30 V GSS DC (Note 1) I 50 A D DCDrain current Pulse (Note 1) I 200 A DP Drain power dissipation (Tc = 25C) P 250 W D JEDEC Single pulse avalanche energy E 525 mJ AS (Note 2) JEITA Avalanche current I 50 A AR TOSHIBA 2-21F1B Repetitive avalanche energy (Note 3) E 25 mJ AR Weight: 9.75 g (typ.) Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 0.5 C / W th (chc) Thermal resistance, channel to ambient R 35.7 C / W th (cha) Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: V = 90 V, T = 25C (initial), L = 357 H, R = 25 , I = 50 A DD ch G AR Note 3: Repetitive rating: pulse width limited by maximum channel temperature. This transistor is an electrostatic-sensitive device. Please handle with caution. Start of commercial production 1998-09 1 2013-11-01 2SK3132 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 25 V, V = 0 V 10 A GSS GS DS Gatesource breakdown voltage V I = 10 A, V = 0 V 30 V (BR) GSS G DS Drain cut off current I V = 500 V, V = 0 V 100 A DSS DS GS Drain source breakdown voltage V I = 10 mA, V = 0 V 500 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.4 3.4 V th DS D Drain source ON resistance R V = 10 V, I = 25 A 0.07 0.095 DS (ON) GS D Forward transfer admittance Y V = 10 V, I = 25 A 15 33 S fs DS D Input capacitance C 11000 iss Reverse transfer capacitance C V = 10 V, V = 0 V, f = 1 MHz 2100 pF rss DS GS Output capacitance C 4200 oss Rise time tr 105 Turn on time t 160 on Switching time ns Fall time t 65 f Turn off time t 245 off Total gate charge (Gatesource Q 280 g plus gate drain) V 400 V, V = 10 V, I = 50 A nC DD GS D Gatesource charge Q 150 gs Gatedrain (miller) charge Q 130 gd SourceDrain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current I 50 A DR (Note 1) Pulse drain reverse current I 200 A DRP (Note 1) Forward voltage (diode) V I = 25 A, V = 0 V 1.7 V DSF DR GS Reverse recovery time t 600 ns rr I = 50 A, V = 0 V DR GS dI / dt = 100 A / s DR Reverse recovery charge Q 12 C rr Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Part No. (or abbreviation code) Not underlined: Pb /INCLUDES > MCV TOSHIBA Underlined: G /RoHS COMPATIBLE or G /RoHS Pb 2SK3132 Lot No. Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. JAPAN Note 4 The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01