Interface and switching (30V, 200mA) 2SK2731 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features (3) 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive(4V). (2) (1) Application (1) Source Switching (2) Gate ROHM : SMT3 (3) Drain EIAJ : SC-59 Abbreviated symbol : KL Packaging specifications Inner circuit Drain Package Taping Type Code T146 Basic ordering unit (pieces) 3000 2SK2731 Gate Gate Protection Diode Source A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Continuous ID 200 mA Drain current Pulsed IDP 800 mA Total power dissipation PD 200 mW Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Pw10s, Duty cycle1% www.rohm.com 2010.06 - Rev.A 1/3 c 2010 ROHM Co., Ltd. All rights reserved. 2SK2731 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS = 20V, VDS = 0V Drain-source breakdown voltage V(BR) DSS 30 V ID = 1mA, VGS = 0V Zero gate voltage drain current IDSS 10 A VDS = 30V, VGS = 0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS = 10V, ID = 1mA 1.5 2.8 ID = 0.1A, VGS = 10V Static drain-source on-state RDS(on) resistance 2.8 4.5 ID = 0.1A, VGS = 4V Forward transfer admittance Yfs 100 mS ID = 0.1A, VDS = 10V Input capacitance Ciss 25 pF VDS = 10V Output capacitance Coss 15 pF VGS = 0V Reverse transfer capacitance Crss 10 pF f = 1MHz Turn-on delay time td (on) 15 ns ID = 0.1A, VDD 15V VGS = 10V Rise time tr 20 ns Turn-off delay time td (off) 90 ns RL = 150 Fall time tf 100 ns RG = 10 Pw 300ms, Duty cycle 1% Electrical characteristic curves 0.5 500m 3 V =10V DS V =10V DS Pulsed I =1mA 10V D 200m 2.5 8V 0.4 6V 100m 5V 2 4V 50m 0.3 Ta=125C 1.5 20m 75C 0.2 25C 10m 25C 1 5m 0.1 V =3V GS 0.5 2m 0 1m 0 01 2 3 4 5 01 2 3 4 5 50 25 0 25 50 75 100 125 150 DRAIN-SOURCE VOLTAGE : V (V) GATE-SOURCE VOLTAGE : VGS(V) CHANNEL TEMPERATURE : Tch(C) DS Fig.1 Typical Output Characteristics Fig.2 Typical Transfer Characteristics Fig.3 Gate Threshold Voltage vs. Channel Temperature 10 100 8 V =10V V =4V Ta=25C GS GS Pulsed Pulsed Ta=125C Pulsed 7 5 50 75C 25C 6 25C 2 20 5 Ta=125C 1 10 4 75C 25C 25C 3 0.5 5 2 ID =200mA 0.2 2 1 100mA 0.1 1 0 1m 2m 5m 10m 20m 50m 100m 200m 500m 1 1m 2m 5m 10m 20m 50m 100m 200m 500m 1 0 5 10 15 20 25 30 DRAIN CURRENT : I (A) GATE-SOURCE VOLTAGE : V (V) D DRAIN CURRENT : ID (A) GS Fig.4 Static Drain-Source On-State Fig.5 Static Drain-Source On-State Fig.6 Static Drain-Source On-State Resistance vs. Drain Current ( ) Resistance vs. Drain Current ( ) Resistance vs. Gate-Source Voltage www.rohm.com 2010.06 - Rev.A 2/3 c 2010 ROHM Co., Ltd. All rights reserved. STATIC DRAIN-SOURCE DRAIN CURRENT : I (A) D ON-STATE RESISTANCE : R () DS(on) STATIC DRAIN-SOURCE DRAIN CURRENT : I (A) D ON-STATE RESISTANCE : R () DS(on) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R () GATE THRESHOLD VOLTAGE : V (V) DS(on) GS (th)