X-On Electronics has gained recognition as a prominent supplier of 2SK2731T146 MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2SK2731T146 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2SK2731T146 ROHM

2SK2731T146 electronic component of ROHM
2SK2731T146 ROHM
2SK2731T146 MOSFETs
2SK2731T146  Semiconductors

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See Product Specifications
Part No. 2SK2731T146
Manufacturer: ROHM
Category: MOSFETs
Description: N-Channel 30 V 200mA (Ta) 200mW (Ta) Surface Mount SMT3
Datasheet: 2SK2731T146 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0846 ea
Line Total: USD 253.8 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.1309

0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 1
Multiples : 1
1 : USD 0.4652
10 : USD 0.3584
100 : USD 0.2436
500 : USD 0.1827
1000 : USD 0.137

0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 1
Multiples : 1
1 : USD 0.4652
10 : USD 0.3584
100 : USD 0.2436
500 : USD 0.1827
1000 : USD 0.137

0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.0846
6000 : USD 0.0831
9000 : USD 0.0791
12000 : USD 0.0785
15000 : USD 0.0768

0
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.0958
9000 : USD 0.0894
24000 : USD 0.0894
45000 : USD 0.0851
99000 : USD 0.0841

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the 2SK2731T146 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK2731T146 and other electronic components in the MOSFETs category and beyond.

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Interface and switching (30V, 200mA) 2SK2731 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Features (3) 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive(4V). (2) (1) Application (1) Source Switching (2) Gate ROHM : SMT3 (3) Drain EIAJ : SC-59 Abbreviated symbol : KL Packaging specifications Inner circuit Drain Package Taping Type Code T146 Basic ordering unit (pieces) 3000 2SK2731 Gate Gate Protection Diode Source A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Continuous ID 200 mA Drain current Pulsed IDP 800 mA Total power dissipation PD 200 mW Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Pw10s, Duty cycle1% www.rohm.com 2010.06 - Rev.A 1/3 c 2010 ROHM Co., Ltd. All rights reserved. 2SK2731 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS = 20V, VDS = 0V Drain-source breakdown voltage V(BR) DSS 30 V ID = 1mA, VGS = 0V Zero gate voltage drain current IDSS 10 A VDS = 30V, VGS = 0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS = 10V, ID = 1mA 1.5 2.8 ID = 0.1A, VGS = 10V Static drain-source on-state RDS(on) resistance 2.8 4.5 ID = 0.1A, VGS = 4V Forward transfer admittance Yfs 100 mS ID = 0.1A, VDS = 10V Input capacitance Ciss 25 pF VDS = 10V Output capacitance Coss 15 pF VGS = 0V Reverse transfer capacitance Crss 10 pF f = 1MHz Turn-on delay time td (on) 15 ns ID = 0.1A, VDD 15V VGS = 10V Rise time tr 20 ns Turn-off delay time td (off) 90 ns RL = 150 Fall time tf 100 ns RG = 10 Pw 300ms, Duty cycle 1% Electrical characteristic curves 0.5 500m 3 V =10V DS V =10V DS Pulsed I =1mA 10V D 200m 2.5 8V 0.4 6V 100m 5V 2 4V 50m 0.3 Ta=125C 1.5 20m 75C 0.2 25C 10m 25C 1 5m 0.1 V =3V GS 0.5 2m 0 1m 0 01 2 3 4 5 01 2 3 4 5 50 25 0 25 50 75 100 125 150 DRAIN-SOURCE VOLTAGE : V (V) GATE-SOURCE VOLTAGE : VGS(V) CHANNEL TEMPERATURE : Tch(C) DS Fig.1 Typical Output Characteristics Fig.2 Typical Transfer Characteristics Fig.3 Gate Threshold Voltage vs. Channel Temperature 10 100 8 V =10V V =4V Ta=25C GS GS Pulsed Pulsed Ta=125C Pulsed 7 5 50 75C 25C 6 25C 2 20 5 Ta=125C 1 10 4 75C 25C 25C 3 0.5 5 2 ID =200mA 0.2 2 1 100mA 0.1 1 0 1m 2m 5m 10m 20m 50m 100m 200m 500m 1 1m 2m 5m 10m 20m 50m 100m 200m 500m 1 0 5 10 15 20 25 30 DRAIN CURRENT : I (A) GATE-SOURCE VOLTAGE : V (V) D DRAIN CURRENT : ID (A) GS Fig.4 Static Drain-Source On-State Fig.5 Static Drain-Source On-State Fig.6 Static Drain-Source On-State Resistance vs. Drain Current ( ) Resistance vs. Drain Current ( ) Resistance vs. Gate-Source Voltage www.rohm.com 2010.06 - Rev.A 2/3 c 2010 ROHM Co., Ltd. All rights reserved. STATIC DRAIN-SOURCE DRAIN CURRENT : I (A) D ON-STATE RESISTANCE : R () DS(on) STATIC DRAIN-SOURCE DRAIN CURRENT : I (A) D ON-STATE RESISTANCE : R () DS(on) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R () GATE THRESHOLD VOLTAGE : V (V) DS(on) GS (th)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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