2SK3065 Transistors Small switching (60V, 2A) 2SK3065 Features External dimensions (Units : mm) 1) Low on resistance. 2) High-speed switching. +0.2 4.5 0.1 1.60.1 1.50.1 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. (1) (2) (3) +0.1 0.4 0.05 5) Easy to use parallel. 0.40.1 0.50.1 0.40.1 1.50.1 1.50.1 6) It is strong to an electrostatic discharge. 3.00.2 (1) Gate (2) Drain ROHM : MPT3 Abbreviated symbol : KE (3) Source EIAJ : SC-62 Structure Silicon N-channel MOS FET transistor Internal equivalent circuit Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Drain Drain-source voltage VDSS 60 V Gate-source voltage VGSS 20 V Continuous ID 2 A Drain current 1 Pulsed IDP 8 A Continuous IDR 2 A Reverse drain Gate current 1 Pulsed IDRP 8 A 0.5 Total power dissipation(Tc=25C) PD W 2 2 Gate Channel temperature Tch 150 C Protection Source Diode Storage temperature Tstg 55+150 C 1 Pw 10 s, Duty cycle 1% A protection diode has been built in between the 2 When mounted on a 40 40 0.7 mm alumina board. gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded. Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-source leakage IGSS 10 A VGS = 20V, VDS = 0V Drain-source breakdown voltage V(BR)DSS 60 V ID = 1mA, VGS = 0V Zero gate voltage drain current IDSS 10 A VDS = 60V, VGS = 0V Gate threshold voltage VGS(th) 0.8 1.5 V VDS = 10V, ID = 1mA 0.25 0.32 ID = 1A, VGS = 4V Static drain-source on-state RDS(on) resistance RDS(on) 0.35 0.45 ID = 1A, VGS = 2.5V Forward transfer admittance Yfs 1.5 S ID = 1A, VDS = 10V Ciss 160 pF VDS = 10V Input capacitance Output capacitance Coss 85 pF VGS = 0V Reverse transfer capacitance Crss 25 pF f = 1MHz td(on) 20 ns ID = 1A, VDD 30V Turn-on delay time Rise time tr 50 ns VGS = 4V 120 ns RL = 30 Turn-off delay time td(off) tf 70 ns RG = 10 Fall time Pw 300 s, Duty cycle 1% +0.5 4.0 0.3 +0.2 2.5 1.00.3 0.1 0.50.12SK3065 Transistors Packaging specifications Package Taping Code T100 Type Basic ordering unit 1000 (pieces) 2SK3065 Electrical characteristic curves 3 10 2 100 s Ta=25C Operating in this 4V 1ms Pulsed area is limited by 3.5V When mounted on a 40 x 40 x 0.7 mm RDS(on) 3V aluminum-ceramic board. 2.5V 1 Pw=10ms 2 2V 0.1 DC OPERATION 1 1 0.01 Ta=25C Single Pulsed VGS=1.5V 0.001 0 0 0 25 50 75 100 125 150 175 0.1 1 10 100 05 10 AMBIENT TEMPERATURE : Ta(C) DRAIN-SOURCE VOLTAGE : VDS(V) DRAIN-SOURCE VOLTAGE : VDS(V) Fig.3 Typical Output Characteristics Fig.1 Total Power Dissipation vs. Fig.2 Maximum Safe Operating Area Case Temperature 10 4 10 VDS=10V VDS=10V VGS=4V Pulsed Pulsed 3 Ta=125C Ta=25C 1 2 1 75C 25C 25C 75C 10mA 25C 125C 1 ID=1mA 0 0.1 0.1 051 2 3 4 50 25 0 25 50 75 100 125 150 0.01 0.1 1 10 GATE THRESHOLD VOLTAGE : VGS(th)(V) CHANNEL TEMPERATURE : Tch(C) DRAIN CURRENT : ID(A) Fig.4 Typical Transfer Characteristics Fig.5 Gate Threshold Voltage vs. Fig.6 Static Drain-Source On- Channel Temperature State Resistance vs. ) Drain Current( DRAIN CURRENT : ID(A) TOTAL POWER DISSIPATION : PD(W) GATE THRESHOLD VOLTAGE : VGS(th)(V) DRAIN CURRENT : ID(A) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)( ) DRAIN CURRENT : ID(A)