X-On Electronics has gained recognition as a prominent supplier of 2SK209-BL(TE85L,F) JFET across the USA, India, Europe, Australia, and various other global locations. 2SK209-BL(TE85L,F) JFET are a product manufactured by Toshiba. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

2SK209-BL(TE85L,F) Toshiba

2SK209-BL(TE85L,F) electronic component of Toshiba
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Part No.2SK209-BL(TE85L,F)
Manufacturer: Toshiba
Category: JFET
Description: JFET N-Ch 10mA -50V FET 150 mW Audio LNA
Datasheet: 2SK209-BL(TE85L,F) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
66: USD 0.6224 ea
Line Total: USD 41.08 
Availability - 3436
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 66  Multiples: 1
Pack Size: 1
Availability Price Quantity
3165
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.423
10 : USD 0.3362
30 : USD 0.2992
100 : USD 0.2536
500 : USD 0.2332
1000 : USD 0.2208

2384
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.98
5 : USD 0.406
25 : USD 0.3668
57 : USD 0.3038
155 : USD 0.287

3436
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 66
Multiples : 1
66 : USD 0.6224
100 : USD 0.416
200 : USD 0.3039
500 : USD 0.247
1000 : USD 0.2308
3000 : USD 0.2162

3355
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 249
Multiples : 1
249 : USD 0.4266
250 : USD 0.4096
500 : USD 0.3948
1000 : USD 0.382
2500 : USD 0.3706

   
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RoHS - XON
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Id - Continuous Drain Current
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Pd - Power Dissipation
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We are delighted to provide the 2SK209-BL(TE85L,F) from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK209-BL(TE85L,F) and other electronic components in the JFET category and beyond.

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2SK209 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK209 Audio Frequency Low Noise Amplifier Applications Unit: mm High Y : Y = 15 mS (typ.) at V = 10 V, V = 0 fs fs DS GS High breakdown voltage: V = 50 V GDS Low noise: NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k DS D G High input impedance: I = 1 nA (max) at V = 30 V GSS GS Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Gate-drain voltage V 50 V GDS Gate current I 10 mA G Drain power dissipation P 150 mW D Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC TO-236 reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA SC-59 absolute maximum ratings. TOSHIBA 2-3F1B Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Weight: 0.012 g (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate cut-off current I V = 30 V, V = 0 1.0 nA GSS GS DS Gate-drain breakdown voltage V V = 0, I = 100 A 50 V (BR) GDS DS G I DSS Drain current V = 10 V, V = 0 1.2 14.0 mA DS GS (Note) Gate-source cut-off voltage V V = 10 V, I = 0.1 A 0.2 1.5 V GS (OFF) DS D Forward transfer admittance Y V = 10 V, V = 0, f = 1 kHz 4.0 15 mS fs DS GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 13 pF iss DS GS Reverse transfer capacitance C V = 10 V, I = 0, f = 1 MHz 3 pF rss DG D V = 10 V, R = 1 k DS G Noise figure NF (1) 5 dB I = 0.5 mA, f = 10 Hz D V = 10 V, R = 1 k DS G Noise figure NF (2) 1 dB I = 0.5 mA, f = 1 kHz D Note: I classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA DSS Marking Start of commercial production 1981-06 1 2014-03-01 2SK209 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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