MAPRST1214-6UF Radar Pulsed Power Transistor M/A-COM Products 6W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty Released, 30 May 07 Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant Absolute Maximum Ratings at 25C Parameter Symbol Rating Units Collector-Emitter Voltage V 65 V CES Emitter-Base Voltage V 3.0 V EBO Collector Current (Peak) I 1.9 A C Power Dissipation +25C P 100 W TOT Storage Temperature T -65 to +200 C STG Junction Temperature T 200 C J Electrical Specifications: T = 25 5C (Room Ambient ) C Parameter Test Conditions Frequency Symbol Min Max Units Collector-Emitter Breakdown Voltage I = 10mA BV 65 - V C CES Collector-Emitter Leakage Current V = 40V I - 3.0 mA CE CES Thermal Resistance Vcc = 36V, Pin = 0.8W F = 1.2, 1.3, 1.4 GHz R - 1.8 C/W TH(JC) Output Power Vcc = 36V, Pin = 0.8W F = 1.2, 1.3, 1.4 GHz P 6 - W OUT Power Gain Vcc = 36V, Pin = 0.8W F = 1.2, 1.3, 1.4 GHz G 8.75 - dB P Gain Flatness Vcc = 36V, Pin = 0.8W F = 1.2, 1.3, 1.4 GHz G - 0.75 dB Collector Efficiency Vcc = 36V, Pin = 0.8W F = 1.2, 1.3, 1.4 GHz 40 - % C Input Return Loss Vcc = 36V, Pin = 0.8W F = 1.2, 1.3, 1.4 GHz RL - -10 dB Pulse Droop Vcc = 36V, Pin = 0.8W F = 1.2, 1.3, 1.4 GHz Droop - 0.3 dB Load Mismatch Tolerance Vcc = 36V, Pin = 0.8W F = 1.2, 1.3, 1.4 GHz VSWR-T - 3:1 - Load Mismatch Stability Vcc = 36V, Pin = 0.8W F = 1.2, 1.3, 1.4 GHz VSWR-S - 1.5:1 - 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MAPRST1214-6UF Radar Pulsed Power Transistor M/A-COM Products 6W, 1.2-1.4 GHz, 6ms Pulse, 25% Duty Released, 30 May 07 Typical RF Performance Freq. Pin Pout Gain Ic Eff Droop RL VSWR-S VSWR-T (GHz) (W) (W) (dB) (A) (%) (dB) (dB) (1.5:1) (3:1) 1.2 0.8 7.3 9.59 0.44 45.7 0.10 -14.1 S P 1.3 0.8 7.2 9.56 0.43 46.6 0.09 -15.2 S P S P 1.4 0.8 6.7 9.26 0.42 44.8 0.08 -16.1 Gain vs. Frequency Collector Efficiency vs. Frequency 10.0 55 9.5 50 9.0 45 8.5 40 8.0 35 1.20 1.25 1.30 1.35 1.40 1.20 1.25 1.30 1.35 1.40 Freq (GHz) Freq (GHz) RF Test Fixture Impedance F (GHz) Z ( ) Z ( ) IF OF 1.2 3.7 j 3.2 16.9 + j18.0 1.3 3.8 j 3.4 14.2 + j16.4 1.4 3.4 j 3.7 11.7 + j18.2 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. Gain (dB) Efficiency (%)