X-On Electronics has gained recognition as a prominent supplier of 2SK208-GR(TE85L,F) JFET across the USA, India, Europe, Australia, and various other global locations. 2SK208-GR(TE85L,F) JFET are a product manufactured by Toshiba. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

2SK208-GR(TE85L,F) Toshiba

2SK208-GR(TE85L,F) electronic component of Toshiba
2SK208-GR(TE85L,F) Toshiba
2SK208-GR(TE85L,F) JFET
2SK208-GR(TE85L,F)  Semiconductors

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See Product Specifications
Part No. 2SK208-GR(TE85L,F)
Manufacturer: Toshiba
Category: JFET
Description: JFET N-Ch SM Sig FET -50V NF 0.5dB -1.0nA -30V
Datasheet: 2SK208-GR(TE85L,F) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1932 ea
Line Total: USD 0.97 
Availability - 8603
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
8603
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 5
Multiples : 5
5 : USD 0.1932
50 : USD 0.1549
150 : USD 0.1146
500 : USD 0.0933
6000 : USD 0.0802
9000 : USD 0.0788

5888
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.5388
10 : USD 0.3475
100 : USD 0.2139
500 : USD 0.1617
1000 : USD 0.1474
3000 : USD 0.1199
9000 : USD 0.1133
24000 : USD 0.1111
45000 : USD 0.11

10552
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.616
10 : USD 0.4816
66 : USD 0.266
180 : USD 0.252
250 : USD 0.2506

5148
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 379
Multiples : 1
379 : USD 0.2405
500 : USD 0.1989
1000 : USD 0.1794
2000 : USD 0.169
3000 : USD 0.1338

934
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 327
Multiples : 1
327 : USD 0.3117
500 : USD 0.3005

2800
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 293
Multiples : 1
293 : USD 0.7644

   
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We are delighted to provide the 2SK208-GR(TE85L,F) from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK208-GR(TE85L,F) and other electronic components in the JFET category and beyond.

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2SK208 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK208 General Purpose and Impedance Converter and Condenser Microphone Applications Unit: mm High breakdown voltage: V = 50 V GDS High input impedance: I = 1.0 nA (max) (V = 30 V) GSS GS Low noise: NF = 0.5dB (typ.) (R = 100 k, f = 120 Hz) G Small package. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Gate-drain voltage V 50 V GDS Gate current I 10 mA G Drain power dissipation P 100 mW D Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC TO-236MOD reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA SC-59 absolute maximum ratings. Please design the appropriate reliability upon reviewing the TOSHIBA 2-3F1B Toshiba Semiconductor Reliability Handbook (Handling Weight: 0.012 g (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate cut-off current I V = 30 V, V = 0 1.0 nA GSS GS DS Gate-drain breakdown voltage V V = 0, I = 100 A 50 V (BR) GDS DS G I DSS Drain current V = 10 V, V = 0 0.3 6.5 mA DS GS (Note) Gate-source cut-off voltage V V = 10 V, I = 0.1 A 0.4 5.0 V GS (OFF) DS D Forward transfer admittance Y V = 10 V, V = 0, f = 1 kHz 1.2 mS fs DS GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 8.2 pF iss DS GS Reverse transfer capacitance C V = 10 V, I = 0, f = 1 MHz 2.6 pF rss GD D V = 15 V, V = 0 DS GS Noise figure NF 0.5 dB R = 100 k, f = 120 Hz G Note: I classification R: 0.30 to 0.75 mA, O: 0.60 to 1.40 mA, Y: 1.2 to 3.0 mA, GR: 2.6 to 6.5 mA DSS Marking Start of commercial production 1981-06 1 2014-03-01 2SK208 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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