X-On Electronics has gained recognition as a prominent supplier of MAPR-002729-170M00 RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. MAPR-002729-170M00 RF Bipolar Transistors are a product manufactured by MACOM. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

MAPR-002729-170M00 MACOM

MAPR-002729-170M00 electronic component of MACOM
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Part No.MAPR-002729-170M00
Manufacturer: MACOM
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors 2.7-2.9GHz Gain8.5dB 170W VSWR: 2.1
Datasheet: MAPR-002729-170M00 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 506.537 ea
Line Total: USD 10130.74 
Availability - 0
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 20
Multiples : 20
20 : USD 506.537

   
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We are delighted to provide the MAPR-002729-170M00 from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MAPR-002729-170M00 and other electronic components in the RF Bipolar Transistors category and beyond.

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MAPR-002729-170M00 Radar Pulsed Power Transistor Rev. V1 170W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Features Outline Drawing NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant Absolute Maximum Ratings at 25C Parameter Symbol Rating Units Collector-Emitter Voltage V 65 V CES Emitter-Base Voltage V 3.0 V EBO Collector Current (Peak) I 27 A C Power Dissipation +25C P 500 W TOT Storage Temperature T -65 to +200 C STG Junction Temperature T 200 C J Electrical Specifications: T = 25 5C (Room Ambient ) C Parameter Test Conditions Frequency Symbol Min Max Units Collector-Emitter Breakdown Voltage I = 250mA BV 65 - V C CES Collector-Emitter Leakage Current V = 40V I - 10 mA CE CES Thermal Resistance Vcc = 36V, Pin = 24W F = 2.7, 2.8, 2.9 GHz R - 0.35 C/W TH(JC) Output Power Vcc = 36V, Pin = 24W F = 2.7, 2.8, 2.9 GHz P 170 - W OUT Power Gain Vcc = 36V, Pin = 24W F = 2.7, 2.8, 2.9 GHz G 8.5 - dB P Collector Efficiency Vcc = 36V, Pin = 24W F = 2.7, 2.8, 2.9 GHz 40 - % C Input Return Loss Vcc = 36V, Pin = 24W F = 2.7, 2.8, 2.9 GHz RL - -10 dB Load Mismatch Tolerance Vcc = 36V, Pin = 24W F = 2.7, 2.8, 2.9 GHz VSWR-T - 2:1 - Load Mismatch Stability Vcc = 36V, Pin = 24W F = 2.7, 2.8, 2.9 GHz VSWR-S - 1.5:1 - 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAPR-002729-170M00 Radar Pulsed Power Transistor Rev. V1 170W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Typical RF Performance Freq. Pin Pout Gain Ic Eff RL VSWR-S VSWR-T (GHz) (W) (W) (dB) (A) (%) (dB) (1.5:1) (2:1) 2.7 24 224 9.69 12.1 51.4 -15.6 S P 2.8 24 217 9.56 11.3 53.4 -14.7 S P 2.9 24 196 9.11 10.3 53.0 -10.6 S P Gain vs. Frequency Collector Efficiency vs. Frequency 10.0 55 9.5 50 9.0 45 8.5 40 8.0 35 2.70 2.75 2.80 2.85 2.90 2.70 2.75 2.80 2.85 2.90 Freq (GHz) Freq (GHz) RF Test Fixture Impedance F (GHz) Z () Z () IF OF 2.7 5.1 - j5.1 1.8 - j2.1 2.8 5.2 - j4.7 1.8 - j1.8 2.9 5.3 - j4.3 1.8 - j1.4 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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