MOSFET - Power, Single P-Channel, SOT-23 -50 V, 10 BSS84L, BVSS84L, SBSS84L SOT23 Surface Mount Package Saves Board Space www.onsemi.com BV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and V R MAX (BR)DSS DS(ON) PPAP Capable 50 V 10 10 V These Devices are PbFree and are RoHS Compliant 3 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit DraintoSource Voltage V 50 Vdc DSS PChannel 1 GatetoSource Voltage Continuous V 20 Vdc GS Drain Current mA Continuous T = 25C I 130 2 A D Pulsed Drain Current (t 10 s) I 520 p DM Total Power Dissipation T = 25C P 225 mW A D 3 SOT23 Operating and Storage Temperature T , T 55 to C J stg CASE 318 Range 150 1 STYLE 21 Thermal Resistance JunctiontoAmbient R 556 C/W JA 2 Thermal Resistance JunctiontoAmbient R 377.2 C/W JA (Note 1) MARKING DIAGRAM & PIN ASSIGNMENT Maximum Lead Temperature for Soldering T 260 C L 3 Purposes, for 10 seconds Drain Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be PD M assumed, damage may occur and reliability may be affected. 1. R is the sum of the junction to case and case to ambient thermal JA resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. And the R is determined by the users JA 1 2 board design. The maximum rating presented here is based on mounting the Gate Source part on JEDEC Standard 513/517. PD = Specific Device Code M = Date Code = PbFree Package (*Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping BSS84LT1G, SOT23 3,000 / Tape & Reel BVSS84LT1G, (PbFree) SBSS84LT1G BSS84LT7G SOT23 3,500 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1997 1 Publication Order Number: December, 2020 Rev. 13 BSS84LT1/DBSS84L, BVSS84L, SBSS84L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 50 Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) GS D Zero Gate Voltage Drain Current I Adc DSS (V = 25 Vdc, V = 0 Vdc) 0.1 DS GS (V = 50 Vdc, V = 0 Vdc) 15 DS GS (V = 50 Vdc, V = 0 Vdc, T = 125C) 60 DS GS J GateBody Leakage Current (V = 20 Vdc, V = 0 Vdc) I 10 nAdc GS DS GSS ON CHARACTERISTICS (Note 2) GateSource Threaded Voltage (V = V , I = 250 A) V 0.9 2.0 Vdc DS GS D GS(th) Static DraintoSource OnResistance (V = 5.0 Vdc, I = 100 mAdc) R 4.7 10 GS D DS(on) Transfer Admittance (V = 25 Vdc, I = 100 mAdc, f = 1.0 kHz) y 50 mS DS D fs DYNAMIC CHARACTERISTICS Input Capacitance V = 5.0 Vdc C 36 pF DS iss Output Capacitance V = 5.0 Vdc C 17 DS oss Transfer Capacitance V = 5.0 Vdc C 6.5 DG rss SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 3.6 ns d(on) Rise Time t 9.7 r V = 15 Vdc, I = 2.5 Adc, DD D R = 50 L TurnOff Delay Time t 12 d(off) Fall Time t 1.7 f Gate Charge V = 40 Vdc, I = 0.5 A, Q 2.2 nC DD D T V = 10 V GS SOURCEDRAIN DIODE CHARACTERISTICS A Continuous Current I 0.130 S Pulsed Current I 0.520 SM Forward Voltage (Note 3) V = 0 V, I = 130 mA V 2.2 V GS S SD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature. TYPICAL ELECTRICAL CHARACTERISTICS 0.6 0.5 V = 10 V 25C DS V = -3.5 V T = 25C GS J 0.45 0.5 -3.25 V 0.4 -55C 150C 0.35 0.4 0.3 -3.0 V 0.3 0.25 0.2 -2.75 V 0.2 0.15 -2.5 V 0.1 0.1 -2.25 V 0.05 0 0 1 1.5 2 2.5 3 3.5 4 02134576 8910 -V , GATE-TO-SOURCE VOLTAGE (VOLTS) -V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) GS DS Figure 1. Transfer Characteristics Figure 2. OnRegion Characteristics www.onsemi.com 2 I , DRAIN CURRENT (AMPS) D I , DRAIN CURRENT (AMPS) D