2N7002 OptiMOS Small-Signal-Transistor Product Summary Features V 60 V DS N-channel R V =10 V 3 DS(on),max GS Enhancement mode V =4.5 V 4 Logic level GS Avalanche rated I 0.3 A D fast switching PG-SOT23 Pb-free lead-plating RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Reel Information Marking HalogenFree Packing 2N7002 PG-SOT-23 H6327: 3000 pcs/reel 72s Yes Non Dry Parameter Symbol Conditions VVlalue Unit I T =25 C Continuous drain current 0.30 A D A T =70 C 0.24 A I T =25 C Pulsed drain current 1.2 D,pulse A E I =0.3 A, R =25 Avalanche energy, single pulse 1.3 mJ AS D GS I =0.3 A, V =48 V, D DS Reverse diode dv /dt dv /dt di /dt =200 A/s, 6 kV/s T =150 C j,max V Gate source voltage 20 V GS ESD class JESD22-A114 (HBM) class 0 (<250V) (2) Power dissipation T =25 C 0.5 W P A tot T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 (1) J-STD20 and JESD22 Rev. 2.4Rev. 2.4 page 1page 1 2012-09-042012-09-042N7002 Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 250 K/W thJA (2) junction - minimal footprint Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V = 0 V, I =250 A Drain-source breakdown voltage 60 - - V (BR)DSS GS D V V =V , I =250 A Gate threshold voltage 1.5 2.1 2.5 GS(th) DS GS D V =60 V, DS Drain-source leakage current I - - 0.1 A D (off) V =0 V, T =25 C GS j V =60 V, DS -- 55 V =0 V, T =150 C GS j I V =20 V, V =0 V Gate-source leakage current - 1 10 nA GSS GS DS Drain-source on-state resistance R V =4.5 V, I =0.25 A - 2.0 4 DS(on) GS D V =10 V, I =0.5 A - 1.6 3 GS D V >2 I R , DS D DS(on)max g Transconductance 0.2 0.36 - S fs I =0.24 A D (2) 2 Perfomed on a 40x40mm FR4 PCB with both sided Cu sense-force traces, each 1mm wide, 70 m thick and 20mm long. Rev. 2.4Rev. 2.4 page 2page 2 2012-09-042012-09-04