2N7002H-7 Diodes Incorporated

2N7002H N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits N-Channel MOSFET I max D V R max (BR)DSS DS(ON) T = +25C A Low On-Resistance Low Gate Threshold Voltage 7.5 V = 5V 60V GS 210mA Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at 2N7002H Marking Information H7H = Product Type Marking Code YM = Date Code Marking H7H Y or Y = Year (ex: B = 2014) M = Month (ex: 9 = September) Date Code Key Year 2014 2015 2016 2017 2018 2019 2020 2021 Code B C D E F G H I Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage Continuous 20 V V GSS Pulsed 40 T = +25C 170 A Steady Continuous Drain Current (Note 5) V = 10V T = +85C I 120 mA GS A D State 105 T = +100C A TA = +25C 210 Steady 150 mA Continuous Drain Current (Note 6) V = 10V T = +85C I GS A D State 135 T = +100C A Maximum Body Diode Forward Current (Note 6) Continuous 0.5 I A S Pulsed 2 Pulsed Drain Current (10s pulse, duty cycle = 1%) 500 mA IDM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units (Note 5) 370 Total Power Dissipation mW P D (Note 6) 510 (Note 5) 341 Thermal Resistance, Junction to Ambient C/W R JA (Note 6) 249 Operating and Storage Temperature Range T T -55 to +150 C J, STG 2 of 7 2N7002H October 2019 Diodes Incorporated www.diodes.com Document number: DS38025 Rev. 2 - 2 YM