2N7002DW OptiMOS Small-Signal-Transistor Product Summary Features V 60 V DS Dual N-channel R V =10 V 3 W DS(on),max GS Enhancement mode Logic level V =4.5 V 4 GS Avalanche rated I 0.3 A D Fast switching Qualified according to AEC Q101 PG-SOT363 100% lead-free RoHS compliant 6 5 4 Halogen-free according to IEC61249-2-21 1 2 3 Type Package Tape and Reel Information Marking HalogenFree Packing 2N7002DW PG-SOT363 H6327: 3000 pcs/reel X8s Yes Non Dry 1) Symbol Conditions Value Unit Parameter I T =25C Continuous drain current 0.30 A D A T =70C 0.24 A Pulsed drain current I T =25C 1.2 D,pulse A E Avalanche energy, single pulse I =0.3A, R =25W 1.3 mJ AS D GS I =0.3A, V =48V, D DS Reverse diode dv /dt dv /dt di /dt =200A/s, 6 kV/s T =150C j,max Gate source voltage V 20 V GS ESD class JESD22-A114 (HBM) class 0 (<250V) P T =25C Power dissipation 0.5 W tot A T , T Operating and storage temperature -55 ... 150 C j stg IEC climatic category DIN IEC 68-1 55/150/56 1) Remark: one of both transistors in operation. Rev.2.3 page 1 2014-09-192N7002DW Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 250 K/W thJA 2) junction - minimal footprint Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V = 0V, I =250A 60 - - V (BR)DSS GS D V V =V , I =250A Gate threshold voltage 1.5 2.1 2.5 GS(th) DS GS D V =60V, V =-10V, DS GS I Drain-source leakage current - - 0.1 A D (off) T =25C j V =60V, DS - - 5 V =0V, T =150C GS j Gate-source leakage current I V =20V, V =0V - 1 10 nA GSS GS DS R V =4.5V, I =0.25A Drain-source on-state resistance - 2.0 4 W DS(on) GS D V =10V, I =0.5A - 1.6 3 GS D V >2 I R , DS D DS(on)max g Transconductance 0.2 0.36 - S fs I =0.24A D 2) 2 Perfomed on a 40x40mm FR4 PCB with both sided Cu sense-force traces, each 1mm wide, 70m thick and 20mm long. Rev.2.3 page 2 2014-09-19