2N6660 N-Channel, Enhancement-Mode, Vertical DMOS FET Features Description Free from secondary breakdown 2N6660 is an enhancement-mode (normally-off) tran- Low power drive requirement sistor that utilizes a vertical DMOS structure and a well- Ease of paralleling proven silicon-gate manufacturing process. This com- bination produces a device with the power-handling Low C and fast switching speeds ISS capabilities of bipolar transistors, and the high input Excellent thermal stability impedance and positive temperature coefficient inher- Integral source-drain diode ent in MOS devices. Characteristic of all MOS struc- High input impedance and high gain tures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications Vertical DMOS FETs are ideally suited to a wide range Motor controls of switching and amplifying applications where very- Converters low threshold voltage, high breakdown voltage, high- Amplifiers input impedance, low-input capacitance, and fast switching speeds are desired. Switches Power supply circuits Drivers: relays, hammers, solenoids, lamps, Package Types memories, displays, bipolar transistors, etc. GATE SOURCE DRAIN TO-39 Case: Drain See Table 2-1 for pin information 2016 Microchip Technology Inc. DS20005509A-page 12N6660 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS Drain-to-source voltage.........................................................................................................................................BV DSS Drain-to-gate voltage.............................................................................................................................................BV DGS Gate-to-source voltage............................................................................................................................................ 20V Operating and Storage Temperature.......................................................................................................... -55 to 150 C Notice: Stresses above those listed under Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise specified, for all specifications T = +25C A Parameter Symbol Min Typ Max Units Conditions DC Parameters (Note 1, unless otherwise stated) Drain-to-source breakdown voltage BV 60 - - V V = 0V, I = 10A DSS GS D Gate threshold voltage V 0.8 - 2.0 V V = V , I = 1.0mA GS(th) GS DS D V change with temperature V --3.8 -5.5mV/CV = V , I = 1.0mA (Note 2) GS(th) GS(th) GS DS D Gate body leakage current I - - 100 nA V = 20V, V = 0V GSS GS DS Zero gate voltage drain current I -- 10 AV = 0V, V = Max rating DSS GS DS - - 500 V = 0.8 Max Rating, DS V = 0V, T = 125C (Note 2) GS A 1.5 - - A V = 10V, V = 10V On-state drain current I D(ON) GS DS -- 5.0 V = 5.0V, I = 0.3A Static drain-to-source on-state R DS(ON) GS D resistance = 10V, I = 1.0A -- 3.0 V GS D AC Parameters (Note 2) 170 - - mmho V = 25V, I = 0.5A Forward transconductance G FS DS D -- 50 pFV = 0V, Input capacitance C ISS GS V = 24V, DS -- 40 Common source output capacitance C OSS f = 1.0MHz -- 10 Reverse transfer capacitance C RSS -- 10 nsV = 25V, I = 1.0A, Turn-on time t (ON) DD D R = 25 GEN -- 10 Turn-off time t (OFF) Diode Parameters -1.2 - V V = 0V, I = 1.0A (Note 1) Diode forward voltage drop V SD GS SD -350 - ns V = 0V, I = 1.0A (Note 2) Reverse recovery time t rr GS SD Note 1: All DC parameters are 100% tested at 25C unless otherwise stated. Pulse test: 300 s pulse, 2% duty cycle. 2: Specification is obtained by characterization and is not 100% tested. TEMPERATURE SPECIFICATIONS Parameter Symbol Min Typ Max Units Conditions Temperature Ranges Operating and Storage Temperature T -55 150 C A DS20005509A-page 2 2016 Microchip Technology Inc.