LOT No. LOT No. Ordering number : ENA1006B SCH2825 N-Channel Power MOSFET SCH2825 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max MOSFET Drain to Source Breakdown Voltage V I =1mA, V =0V 30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =30V, V =0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =800mA 0.6 1.0 S DS D R (on)1 I =800mA, V =10V 135 180 m DS D GS Static Drain to Source On-State Resistance R (on)2 I =400mA, V =4V 230 330 m DS D GS Input Capacitance Ciss 88 pF Output Capacitance Coss V =10V, f=1MHz 19 pF DS Reverse Transfer Capacitance Crss 11 pF Turn-ON Delay Time t (on) 3.4 ns d Rise Time t 3.5 ns r See speci ed Test Circuit. Turn-OFF Delay Time t(off) 10.6ns d Fall Time t 4.0 ns f Total Gate Charge Qg 2.0 nC Gate to Source Charge Qgs V =10V, V =10V, I =1.6A 0.33 nC DS GS D Gate to Drain Miller Charge Qgd 0.29 nC Diode Forward Voltage V I =1.6A, V =0V 0.82 1.2 V SD S GS SBD Reverse Voltage V I =0.5mA 30 V R R Forward Voltage V I =0.5A 0.42 0.48 V F F Reverse Current I V =15V 120 A R R Interterminal Capacitance C V =10V, f=1MHz 13 pF R Reverse Recovery Time t I =I =100mA, See speci ed Test Circuit. 10 ns rr F R Switching Time Test Circuit t Test Circuit rr (MOSFET) (SBD) V =15V V DD IN Duty 10% 10V 0V I =800mA D V IN R =18.75 L 50 100 10 10 s D V OUT PW=10 s D.C.1% G --5V t rr SCH2825 P.G 50 S Ordering Information Device Package Shipping memo SCH2825-TL-E SCH6 5,000pcs./reel Pb Free No. A1006-2/6 100mA 100mA 10mA